Transistor EIC MMBT2222AE NPN Silicon Epitaxial Planar Suitable for Switching and Amplifier Circuits
Key Attributes
Model Number:
MMBT2222AE
Product Custom Attributes
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
300MHz
Current - Collector(Ic):
600mA
Mfr. Part #:
MMBT2222AE
Package:
SOT-523-3
Product Description
Product Overview
The MMBT2222E / MMBT2222AE are NPN Silicon Epitaxial Planar Transistors designed for switching and amplifier applications. They offer reliable performance in various electronic circuits.
Product Attributes
- Brand: EIC SEMI
- Certifications: IATF 0113686, SGS TH07/1033, TH09/2479, TH97/2478
Technical Specifications
| Parameter | Symbol | MMBT2222E | MMBT2222AE | Unit |
| Absolute Maximum Ratings | ||||
| Collector Base Voltage | VCBO | 60 | 75 | V |
| Collector Emitter Voltage | VCEO | 30 | 40 | V |
| Emitter Base Voltage | VEBO | 5 | 6 | V |
| Collector Current | IC | 600 | mA | |
| Power Dissipation | Ptot | 150 | mW | |
| Junction Temperature | Tj | 150 | OC | |
| Storage Temperature Range | Tstg | - 55 to + 150 | OC | |
| Characteristics | ||||
| DC Current Gain at VCE = 10 V, IC = 0.1 mA | hFE | 35 | - | |
| DC Current Gain at VCE = 10 V, IC = 1 mA | hFE | 50 | - | |
| DC Current Gain at VCE = 10 V, IC = 10 mA | hFE | 75 | - | |
| DC Current Gain at VCE = 1 V, IC = 150 mA | hFE | 50 | 30 | |
| DC Current Gain at VCE = 10 V, IC = 150 mA | hFE | 100 | - | |
| DC Current Gain at VCE = 10 V, IC = 500 mA | hFE | 30 | - | |
| Collector Base Cutoff Current at VCB = 50 V | ICBO | - | 100 | nA |
| Collector Base Cutoff Current at VCB = 60 V | ICBO | - | 100 | nA |
| Emitter Base Cutoff Current at VEB = 3 V | IEBO | - | 100 | nA |
| Collector Base Breakdown Voltage at IC = 10 A | V(BR)CBO | 60 | 75 | V |
| Collector Emitter Breakdown Voltage at IC = 10 mA | V(BR)CEO | 30 | 40 | V |
| Emitter Base Breakdown Voltage at IE = 10 A | V(BR)EBO | 5 | 6 | V |
| Collector Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA | VCE(sat) | - | 0.4 | V |
| Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA | VCE(sat) | 0.3 | - | V |
| Base Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA | VBE(sat) | - | 0.6 | V |
| Base Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA | VBE(sat) | 1.3 | 1.2 | V |
| Transition Frequency at VCE = 20 V, -IE = 20 mA, f = 100 MHz | fT | 300 | - | MHz |
| Collector Output Capacitance at VCB = 10 V, f = 100 KHz | Cob | - | 8 | pF |
| Delay Time at VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA | td | - | 10 | ns |
| Rise Time at VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA | tr | - | 25 | ns |
| Storage Time at VCC = 30 V, IC = 150 mA, IB1 = -IB2 = 15 mA | tstg | - | 225 | ns |
| Fall Time at VCC = 30 V, IC = 150 mA, IB1 = -IB2 = 15 mA | tf | - | 60 | ns |
2410121653_EIC-MMBT2222AE_C3014318.pdf
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