High Voltage NPN Silicon Epitaxial Planar Transistor EIC MMBT6517 for Switching and Amplifier Circuits
Key Attributes
Model Number:
MMBT6517
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
200MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
350V
Mfr. Part #:
MMBT6517
Package:
TO-236-3
Product Description
Product Overview
MMBT6517 is an NPN Silicon Epitaxial Planar Transistor designed for switching and AF amplifier applications. On special request, these transistors can be manufactured in different pin configurations.
Product Attributes
- Brand: EIC
- Certifications: IATF 0113686, SGS TH07/1033, TH09/2479, TH97/2478
- Package: TO-236 Plastic Package
Technical Specifications
| Parameter | Symbol | Value | Unit | Min. | Max. |
| Absolute Maximum Ratings (Ta = 25 OC) | |||||
| Collector Base Voltage | VCBO | 350 | V | ||
| Collector Emitter Voltage | VCEO | 350 | V | ||
| Emitter Base Voltage | VEBO | 6 | V | ||
| Collector Current | IC | 500 | mA | ||
| Power Dissipation | Ptot | 200 | mW | ||
| Junction Temperature | Tj | 150 | OC | ||
| Storage Temperature Range | Tstg | - 55 to + 150 | OC | ||
| Characteristics at Ta = 25 OC | |||||
| DC Current Gain at VCE = 10 V, IC = 1 mA | hFE | 20 | |||
| DC Current Gain at VCE = 10 V, IC = 10 mA | hFE | 30 | 200 | ||
| DC Current Gain at VCE = 10 V, IC = 30 mA | hFE | 30 | 200 | ||
| DC Current Gain at VCE = 10 V, IC = 50 mA | hFE | 20 | |||
| DC Current Gain at VCE = 10 V, IC = 100 mA | hFE | 15 | |||
| Collector Base Cutoff Current at VCB = 250 V | ICBO | nA | - 50 | ||
| Emitter Base Cutoff Current at VEB = 5 V | IEBO | nA | - 50 | ||
| Collector Base Breakdown Voltage at IC = 100 A | V(BR)CBO | 350 | V | - | |
| Collector Emitter Breakdown Voltage at IC = 1 mA | V(BR)CEO | 350 | V | - | |
| Emitter Base Breakdown Voltage at IE = 10 A | V(BR)EBO | 6 | V | - | |
| Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA | VCE(sat) | V | 0.3 | ||
| Collector Emitter Saturation Voltage at IC = 20 mA, IB = 2 mA | VCE(sat) | V | 0.35 | ||
| Collector Emitter Saturation Voltage at IC = 30 mA, IB = 3 mA | VCE(sat) | V | 0.5 | ||
| Collector Emitter Saturation Voltage at IC = 50 mA, IB = 5 mA | VCE(sat) | V | 1 | ||
| Base Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA | VBE(sat) | V | 0.75 | ||
| Base Emitter Saturation Voltage at IC = 20 mA, IB = 2 mA | VBE(sat) | V | 0.85 | ||
| Base Emitter Saturation Voltage at IC = 30 mA, IB = 3 mA | VBE(sat) | V | 0.9 | ||
| Base Emitter On Voltage at VCE = 10 V, IC = 100 mA | VBE(on) | V | 2 | ||
| Gain Bandwidth Product at VCE = 20 V, IC = 10 mA, f = 20 MHz | fT | MHz | 40 | 200 | |
| Collector Output Capacitance at VCB = 20 V, f = 1 MHz | Cob | pF | 6 | ||
2410121531_EIC-MMBT6517_C3014319.pdf
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