Diodes DMN30H4D0L 7 N channel MOSFET designed for switching in DC DC converters and power management
Key Attributes
Model Number:
DMN30H4D0L-7
Product Custom Attributes
Drain To Source Voltage:
300V
Current - Continuous Drain(Id):
250mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
4Ω@10V,0.25A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
8.7pF@25V
Number:
-
Input Capacitance(Ciss):
187.3pF@25V
Pd - Power Dissipation:
310mW
Gate Charge(Qg):
7.6nC
Mfr. Part #:
DMN30H4D0L-7
Package:
SOT-23
Product Description
Product Overview
The Diodes Incorporated DMN30H4D0L is a new generation N-channel enhancement mode MOSFET designed for high efficiency power management applications. It minimizes on-state resistance (RDS(ON)) while maintaining superior switching performance. Ideal for DC-DC converters, power management functions, battery-operated systems, solid-state relays, and various driver applications.
Product Attributes
- Brand: Diodes Incorporated
- Product Line: NEW PRODUCT
- Material: Molded Plastic (UL Flammability Classification Rating 94V-0)
- Lead Finish: Matte Tin Finish (annealed over Alloy 42 leadframe)
- Environmental Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
- Reliability Qualification: Qualified to AEC-Q101 Standards
- Moisture Sensitivity: Level 1 per J-STD-020
Technical Specifications
| Characteristic | Symbol | Value | Units | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 300 | V | |
| Gate-Source Voltage | VGSS | 20 | V | |
| Continuous Drain Current (TA = +25C) | ID | 0.25 | A | VGS = 10V, Steady State |
| Continuous Drain Current (TA = +70C) | ID | 0.20 | A | VGS = 10V, Steady State |
| Pulsed Drain Current (10s pulse, duty cycle 1%) | IDM | 2 | A | |
| Maximum Body Diode Continuous Current | IS | 0.8 | A | |
| Total Power Dissipation (Note 5) | PD | 0.31 | W | |
| Total Power Dissipation (Note 6) | PD | 0.47 | W | |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 377 | C/W | |
| Thermal Resistance, Junction to Ambient (Note 6) | RJA | 255 | C/W | |
| Thermal Resistance, Junction to Case (Note 6) | RJC | 81 | C/W | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to 150 | C | |
| Drain-Source Breakdown Voltage | BVDSS | 300 | V | VGS = 0V, ID = 250A |
| Zero Gate Voltage Drain Current | IDSS | 1.0 | A | VDS = 240V, VGS = 0V |
| Gate-Body Leakage | IGSS | 100 | nA | VGS = 20V, VDS = 0V |
| Gate Threshold Voltage | VGS(th) | 1 to 3 | V | VDS = VGS, ID = 250 A |
| Static Drain-Source On-Resistance (VGS = 10V, ID = 0.3A) | RDS(ON) | 2.1 to 4 | ||
| Static Drain-Source On-Resistance (VGS = 4.5V, ID = 0.2A) | RDS(ON) | 2.1 to 4 | ||
| Static Drain-Source On-Resistance (VGS = 2.7V, ID = 0.1A) | RDS(ON) | 3.8 to 6 | ||
| Diode Forward Voltage | VSD | 0.7 to 1.2 | V | VGS = 0V, IS = 0.3A |
| Input Capacitance | Ciss | 187.3 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 11.7 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 8.7 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Total Gate Charge | Qg | 7.6 | nC | VDS = 192V, VGS = 10V, ID = 0.5A |
| Gate-Source Charge | Qgs | 0.5 | nC | VDS = 192V, VGS = 10V, ID = 0.5A |
| Gate-Drain Charge | Qgd | 3.3 | nC | VDS = 192V, VGS = 10V, ID = 0.5A |
| Turn-On Delay Time | tD(on) | 4.9 | nS | VDS = 60V, RL =200, VGS = 10V, RG = 25 |
| Turn-On Rise Time | tr | 4.7 | nS | VDS = 60V, RL =200, VGS = 10V, RG = 25 |
| Turn-Off Delay Time | tD(off) | 25.8 | nS | VDS = 60V, RL =200, VGS = 10V, RG = 25 |
| Turn-Off Fall Time | tf | 17.5 | nS | VDS = 60V, RL =200, VGS = 10V, RG = 25 |
| Case | SOT23 | |||
| Weight (approximate) | 0.008 | grams |
Ordering Information
| Part Number | Case | Packaging |
|---|---|---|
| DMN30H4D0L-7 | SOT23 | 3,000/Tape & Reel |
| DMN30H4D0L-13 | SOT23 | 10,000/Tape & Reel |
Package Outline Dimensions (SOT23)
| Dim | Min | Max | Typ |
|---|---|---|---|
| A | 0.37 | 0.51 | 0.40 |
| B | 1.20 | 1.40 | 1.30 |
| C | 2.30 | 2.50 | 2.40 |
| D | 0.89 | 1.03 | 0.915 |
| F | 0.45 | 0.60 | 0.535 |
| G | 1.78 | 2.05 | 1.83 |
| H | 2.80 | 3.00 | 2.90 |
| J | 0.013 | 0.10 | 0.05 |
| K | 0.903 | 1.10 | 1.00 |
| K1 | - | - | 0.400 |
| L | 0.45 | 0.61 | 0.55 |
| M | 0.085 | 0.18 | 0.11 |
| 0 | 8 | - |
All Dimensions in mm
1912111437_DIODES-DMN30H4D0L-7_C461015.pdf
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