Car ignition diode EIC QSHV-06JN with glass passivated junction chip and high surge current handling
Key Attributes
Model Number:
QSHV-06JN
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
3A
Reverse Leakage Current (Ir):
10uA
Voltage - DC Reverse (Vr) (Max):
3kV
Operating Junction Temperature Range:
-40℃~+150℃
Voltage - Forward(Vf@If):
6V@10mA
Current - Rectified:
30mA
Mfr. Part #:
QSHV-06JN
Package:
DO-41
Product Description
Product Overview
The QSHV-06JN is a glass passivated car ignition diode designed for high voltage applications, specifically in igniters. It offers high voltage capability, high surge current handling, and high reliability with a low reverse current and low forward voltage drop. This diode is AEC-Q101 qualified and meets Pb Free / RoHS compliance.
Product Attributes
- Brand: eicsemi
- Certifications: AEC-Q101 qualified, UL94V-0 rate flame retardant, MIL-STD-202
- Material: Glass passivated junction chip, Molded plastic case
- Compliance: Pb Free / RoHS Compliance
- Moisture Sensitivity Level: 1 (Unlimited)
Technical Specifications
| Parameter | Symbol | Value | Units | Conditions |
| Maximum Peak Reverse Voltage | VRM | 3000 | V | |
| Maximum Average Forward Current | IF(AV) | 30 | mA | |
| Reverse Surge Current | IRSM | 30 | A | Half wave 100 s of triangle wave, High solitary wave |
| Surge Forward Current | IFSM | 10 | A | 50 Hz half-wave single |
| Maximum Peak Forward Voltage | VF | 3.2 - 6.0 | V | at IF = 10 mA |
| Maximum Reverse Current | IR | 3 | A | at VR = VRM |
| Reverse Breakdown Voltage | VZ(Min.) / VZ(Max.) | 5.6 / 6.0 | kV | at IR = 100 A |
| Operating Junction Temperature Range | TJ | -40 to +150 | C | |
| Storage Temperature Range | TSTG | -40 to +150 | C |
2410121914_EIC-QSHV-06JN_C3014334.pdf
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