60 Volt VDS Rating DIODES ZVP3306FTA P Channel Enhancement Mode Vertical DMOS FET in SOT23 Package
Key Attributes
Model Number:
ZVP3306FTA
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
-
Operating Temperature -:
-
RDS(on):
14Ω@10V,200mA
Gate Threshold Voltage (Vgs(th)):
3.5V@1mA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
8pF
Number:
1 P-Channel
Output Capacitance(Coss):
25pF
Input Capacitance(Ciss):
50pF
Pd - Power Dissipation:
330mW
Gate Charge(Qg):
-
Mfr. Part #:
ZVP3306FTA
Package:
SOT-23
Product Description
Product Overview
The ZVP3306F is a P-Channel enhancement mode vertical DMOS FET designed for various applications. It features a 60 Volt VDS rating and a low RDS(on) of 14 Ohms. This device is complementary to the ZVN3306F and is supplied in a SOT23 package.
Product Attributes
- Package Type: SOT23
- FET Type: P-Channel Enhancement Mode Vertical DMOS
- Complementary Type: ZVN3306F
- Part Marking Detail: ML
Technical Specifications
| Parameter | Symbol | Min. | Max. | Unit | Conditions |
|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | ||
| Continuous Drain Current at Tamb=25C | ID | -90 | mA | ||
| Pulsed Drain Current | IDM | -1.6 | A | ||
| Gate Source Voltage | VGS | 20 | V | ||
| Power Dissipation at Tamb=25C | Ptot | 330 | mW | ||
| Operating and Storage Temperature Range | Tj:Tstg | -55 | +150 | C | |
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | ID=-1mA, VGS=0V | |
| Gate-Source Threshold Voltage | VGS(th) | -1.5 | -3.5 | V | ID=-1mA, VDS= VGS |
| Gate-Body Leakage | IGSS | 20 | nA | VGS= 20V, VDS=0V | |
| Zero Gate Voltage Drain Current | IDSS | -0.5 | -50 | A | VDS=-60 V, VGS=0V |
| Zero Gate Voltage Drain Current | IDSS | A | VDS=-48 V, VGS=0V, T=125C(2) | ||
| On-State Drain Current | ID(on) | -400 | mA | VDS=-18 V, VGS=-10V (1) | |
| Static Drain-Source On-State Resistance | RDS(on) | 14 | VGS=-10V, ID=-200mA (1) | ||
| Forward Transconductance | gfs | 60 | mS | VDS=-18V, ID=-200mA (1)(2) | |
| Input Capacitance | Ciss | 50 | pF | VDS=-18V, VGS=0V, f=1MHz (2) | |
| Common Source Output Capacitance | Coss | 25 | pF | VDS=-18V, VGS=0V, f=1MHz (2) | |
| Reverse Transfer Capacitance | Crss | 8 | pF | VDS=-18V, VGS=0V, f=1MHz (2) | |
| Turn-On Delay Time | td(on) | 8 | ns | VDD -18V, ID=-200mA (2)(3) | |
| Rise Time | tr | 8 | ns | VDD -18V, ID=-200mA (2)(3) | |
| Turn-Off Delay Time | td(off) | 8 | ns | VDD -18V, ID=-200mA (2)(3) | |
| Fall Time | tf | 8 | ns | VDD -18V, ID=-200mA (2)(3) |
(1) Measured under pulsed conditions. Width=300s. Duty cycle 2%
(2) Sample test.
(3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
1809081612_DIODES-ZVP3306FTA_C151017.pdf
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