30V N Channel Enhancement Mode MOSFET Diodes DMN3025LFV 13 for Power Management and DC DC Converters
Key Attributes
Model Number:
DMN3025LFV-13
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
25A
RDS(on):
30mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
57pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
500pF@15V
Pd - Power Dissipation:
2.2W
Gate Charge(Qg):
9.8nC@10V
Mfr. Part #:
DMN3025LFV-13
Package:
PowerDI3333-8
Product Description
Product Overview
The Diodes Incorporated DMN3025LFV is a 30V N-channel enhancement mode MOSFET designed for high efficiency power management applications. It minimizes on-state resistance (RDS(ON)) while maintaining superior switching performance. Ideal for backlighting, power management functions, and DC-DC converters, this MOSFET offers low RDS(ON) for reduced on-state losses and comes in a small, thermally efficient PowerDI3333-8 package that enables higher density and smaller end products.
Product Attributes
- Brand: Diodes Incorporated
- Product Type: N-Channel Enhancement Mode MOSFET
- Package: PowerDI3333-8 (Type UX)
- Material: Molded Plastic, "Green" Molding Compound
- Flammability Classification: UL 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Finish: Matte Tin Annealed over Copper Leadframe
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage | BVDSS | 30 | V | VGS = 0V, ID = 250A |
| Gate-Source Voltage | VGSS | 20 | V | |
| Continuous Drain Current @ TC = +25C | ID | 25 | A | VGS = 10V |
| Continuous Drain Current @ TC = +70C | ID | 20 | A | VGS = 10V |
| Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) | IDM | 55 | A | |
| Static Drain-Source On-Resistance @ VGS = 10V | RDS(ON) | 18 | m | ID = 7A |
| Static Drain-Source On-Resistance @ VGS = 4.5V | RDS(ON) | 30 | m | ID = 7A |
| Total Power Dissipation (Note 5) | PD | 0.9 | W | @TA = +25C |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 146 | C/W | Steady State |
| Total Power Dissipation (Note 6) | PD | 2.2 | W | @TA = +25C |
| Thermal Resistance, Junction to Ambient (Note 6) | RJA | 57 | C/W | Steady State |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Gate Threshold Voltage | VGS(TH) | 1.0 - 2.0 | V | VDS = VGS, ID = 250A |
| Input Capacitance | Ciss | 500 | pF | VDS = 15V, VGS = 0V, f = 1MHz |
| Output Capacitance | Coss | 72 | pF | VDS = 15V, VGS = 0V, f = 1MHz |
| Reverse Transfer Capacitance | Crss | 57 | pF | VDS = 15V, VGS = 0V, f = 1MHz |
| Total Gate Charge (VGS = 4.5V) | Qg | 4.6 | nC | VDS = 15V, ID = 10A |
| Total Gate Charge (VGS = 10V) | Qg | 9.8 | nC | VDS = 15V, ID = 10A |
| Weight | 0.072 | grams (Approximate) | ||
| Package Dimensions (D) | 3.20 - 3.40 | mm | ||
| Package Dimensions (E) | 3.20 - 3.40 | mm |
Ordering Information
| Part Number | Case | Packaging |
|---|---|---|
| DMN3025LFV-7 | PowerDI3333-8 (Type UX) | 2,000/Tape & Reel |
| DMN3025LFV-13 | PowerDI3333-8 (Type UX) | 3,000/Tape & Reel |
2308101546_DIODES-DMN3025LFV-13_C3279394.pdf
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