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quality High Reliability 30 Volt MOSFET Diodes DMN3032LE 13 with Low Input Capacitance and Fast Switching factory
quality High Reliability 30 Volt MOSFET Diodes DMN3032LE 13 with Low Input Capacitance and Fast Switching factory

High Reliability 30 Volt MOSFET Diodes DMN3032LE 13 with Low Input Capacitance and Fast Switching

Key Attributes
Model Number: DMN3032LE-13
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
15.4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
35mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
45pF
Number:
-
Input Capacitance(Ciss):
498pF@15V
Pd - Power Dissipation:
14W
Gate Charge(Qg):
11.3nC@10V
Mfr. Part #:
DMN3032LE-13
Package:
SOT-223
Product Description

Product Overview

The Diodes Incorporated DMN3032LE is a new generation, 30V N-channel enhancement mode MOSFET designed for high efficiency power management applications. It minimizes on-state resistance (RDS(ON)) while maintaining superior switching performance. Key features include low input capacitance, fast switching speed, and low input/output leakage. This device is ideal for DC motor control and DC-AC inverters. It is Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device), and qualified to AEC-Q101 Standards for High Reliability.

Product Attributes

  • Brand: Diodes Incorporated
  • Product Line: NEW PRODUCT
  • Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0
  • Certifications: AEC-Q101 Standards for High Reliability
  • Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
  • Terminals Finish: Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208

Technical Specifications

Characteristic Symbol Value Unit Test Condition
Drain-Source Voltage VDSS 30 V
RDS(on) max @ VGS = 10V RDS(ON) 29 m ID = 3.2A
RDS(on) max @ VGS = 4.5V RDS(ON) 35 m ID = 2.8A
ID @ TA = +25C ID 5.6 A VGS = 10V
ID @ TA = +25C ID 4.8 A VGS = 4.5V
Continuous Drain Current (Note 5) @ TA = +25C ID 5.6 A VGS = 10V
Continuous Drain Current (Note 5) @ TA = +70C ID 4.1 A VGS = 10V
Continuous Drain Current (Note 5) @ TC = +25C ID 15.4 A
Continuous Drain Current (Note 5) @ TC = +70C ID 12.1 A
Maximum Continuous Body Diode Forward Current (Note 5) IS 1.5 A
Pulsed Drain Current (10s pulse, duty cycle = 1%) IDM 25 A
Total Power Dissipation (Note 5) @ TA = +25C PD 1.8 W
Total Power Dissipation (Note 5) @ TA = +70C PD 1.1 W
Total Power Dissipation (Note 5) PD 14 W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 C
Drain-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250A
Zero Gate Voltage Drain Current IDSS 1 A VDS = 30V, VGS = 0V
Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS = 0V
Gate Threshold Voltage VGS(th) 1 - 2 V VDS = VGS, ID = 250A
Static Drain-Source On-Resistance RDS (ON) 22 (Typ) m VGS = 10V, ID = 3.2A
Static Drain-Source On-Resistance RDS (ON) 27 (Typ) m VGS = 4.5V, ID = 2.8A
Forward Transfer Admittance |Yfs| 7 (Typ) S VDS = 5V, ID = 5.8A
Diode Forward Voltage VSD 0.7 - 1.5 V VGS = 0V, IS = 1A
Input Capacitance Ciss 498 (Typ) pF VDS = 15V, VGS = 0V, f = 1MHz
Output Capacitance Coss 52 (Typ) pF VDS = 15V, VGS = 0V, f = 1MHz
Reverse Transfer Capacitance Crss 45 (Typ) pF VDS = 15V, VGS = 0V, f = 1MHz
Gate Resistance Rg 2.2 (Typ) VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge Qg 11.3 (Typ) nC VDS = 15V, VGS = 10V, ID = 5.8A
Gate-Source Charge Qgs 1.4 (Typ) nC VDS = 15V, VGS = 10V, ID = 5.8A
Gate-Drain Charge Qgd 2.1 (Typ) nC VDS = 15V, VGS = 10V, ID = 5.8A
Turn-On Delay Time tD(on) 2.3 (Typ) ns VDS = 15V, VGS = 10V, RL = 2.6, RG = 3
Turn-On Rise Time tr 3.9 (Typ) ns VDS = 15V, VGS = 10V, RL = 2.6, RG = 3
Turn-Off Delay Time tD(off) 10 (Typ) ns VDS = 15V, VGS = 10V, RL = 2.6, RG = 3
Turn-Off Fall Time tf 1.9 (Typ) ns VDS = 15V, VGS = 10V, RL = 2.6, RG = 3
Case SOT223
Weight 0.112 grams (approximate)
Ordering Part Number DMN3032LE-13 SOT223, 2,500 / Tape & Reel

SOT223 Dimensions:

Dim Min Max Typ
A 1.55 1.65 1.60
A1 0.010 0.15 0.05
b 0.60 0.80 0.70
b1 2.90 3.10 3.00
C 0.20 0.30 0.25
D 6.45 6.55 6.50
E 3.45 3.55 3.50
E1 6.90 7.10 7.00
e - - 4.60
e1 - - 2.30
L 0.85 1.05 0.95
Q 0.84 0.94 0.89

All Dimensions in mm


1806080112_DIODES-DMN3032LE-13_C156338.pdf

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