General purpose EIC 1N4007 diode with high current capability and Pb RoHS free compliant construction
Product Overview
The 1N4001 to 1N4007 series are general-purpose silicon rectifier diodes designed for a wide range of applications. They offer high current capability, high surge current capability, and high reliability, making them suitable for power supply rectification, switching, and general-purpose use. These diodes feature low reverse current and low forward voltage drop, with a Pb/RoHS Free construction.
Product Attributes
- Case: DO-41 Molded plastic
- Epoxy: UL94V-O rate flame retardant
- Lead: Axial lead solderable per MIL-STD-202, Method 208 guaranteed
- Polarity: Color band denotes cathode end
- Mounting position: Any
- Weight: 0.335 gram
- Certifications: Pb / RoHS Free
Technical Specifications
| Model | Maximum Repetitive Peak Reverse Voltage (VRRM) | Maximum RMS Voltage (VRMS) | Maximum DC Blocking Voltage (VDC) | Maximum Average Forward Current (IF(AV)) at Ta=75C (0.375" Lead Length) | Maximum Peak Forward Surge Current (IFSM) 8.3ms Single half sine wave | Maximum Forward Voltage (VF) at IF=1.0A | Maximum DC Reverse Current (IR) at Ta=25C (Rated VDC) | Typical Reverse Recovery Time (Trr) | Typical Junction Capacitance (CJ) | Typical Thermal Resistance (RJA) | Junction Temperature Range (TJ) | Storage Temperature Range (TSTG) |
| 1N4001 | 50 V | 35 V | 50 V | 1.0 A | 30 A | 1.1 V | 5.0 mA | 2.0 ms | 15 pF | 26 C/W | -65 to +175 C | -65 to +175 C |
| 1N4002 | 100 V | 70 V | 100 V | 1.0 A | 30 A | 1.1 V | 5.0 mA | 2.0 ms | 15 pF | 26 C/W | -65 to +175 C | -65 to +175 C |
| 1N4003 | 200 V | 140 V | 200 V | 1.0 A | 30 A | 1.1 V | 5.0 mA | 2.0 ms | 15 pF | 26 C/W | -65 to +175 C | -65 to +175 C |
| 1N4004 | 400 V | 280 V | 400 V | 1.0 A | 30 A | 1.1 V | 5.0 mA | 2.0 ms | 15 pF | 26 C/W | -65 to +175 C | -65 to +175 C |
| 1N4005 | 600 V | 420 V | 600 V | 1.0 A | 30 A | 1.1 V | 5.0 mA | 2.0 ms | 15 pF | 26 C/W | -65 to +175 C | -65 to +175 C |
| 1N4006 | 800 V | 560 V | 800 V | 1.0 A | 30 A | 1.1 V | 5.0 mA | 2.0 ms | 15 pF | 26 C/W | -65 to +175 C | -65 to +175 C |
| 1N4007 | 1000 V | 700 V | 1000 V | 1.0 A | 30 A | 1.1 V | 5.0 mA | 2.0 ms | 15 pF | 26 C/W | -65 to +175 C | -65 to +175 C |
2410121536_EIC-1N4007_C2978779.pdf
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