Low Input Capacitance N Channel MOSFET Diodes DMN33D8LTQ 13 with PPAP Capability and RoHS Compliance
Key Attributes
Model Number:
DMN33D8LTQ-13
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
115mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
5Ω@4V
Gate Threshold Voltage (Vgs(th)):
1.5V@100uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8pF
Number:
1 N-channel
Output Capacitance(Coss):
11pF
Input Capacitance(Ciss):
48pF
Pd - Power Dissipation:
300mW
Gate Charge(Qg):
1.23nC@10V
Mfr. Part #:
DMN33D8LTQ-13
Package:
SOT-523
Product Description
Product Overview
The Diodes Incorporated DMN33D8LTQ is an N-channel enhancement mode MOSFET designed to meet the stringent requirements of automotive applications. It is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. This device offers low on-resistance, low input capacitance, and fast switching speeds, making it ideal for Brushless DC Motor Control, DC-DC Converters, and Load Switch applications. The MOSFET features ESD protection for the gate, is totally lead-free, fully RoHS compliant, and halogen and antimony free (Green Device).
Product Attributes
- Brand: Diodes Incorporated
- Product Type: N-Channel Enhancement Mode MOSFET
- Qualification: AEC-Q101
- PPAP Capable: Yes
- Manufacturing Certification: IATF 16949
- Environmental Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
- Gate Protection: ESD Protected Gate 2KV
- Case Material: Molded Plastic, Green Molding Compound, UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Finish: Matte Tin Finish Annealed Over Alloy 42 Leadframe (Lead Free Plating)
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage | BVDSS | 30 | V | VGS = 0V, ID = 250A |
| Gate-Source Voltage | VGSS | ±20 | V | |
| Drain Current (Continuous) | ID | 115 | mA | TA = +25°C (Note 5) |
| Static Drain-Source On-Resistance | RDS(ON) | 5 | Ω | VGS = 4V, ID = 10mA |
| Static Drain-Source On-Resistance | RDS(ON) | 7 | Ω | VGS = 2.5V, ID = 5mA |
| Total Power Dissipation | PD | 240 | mW | TA = +25°C (Note 5) |
| Thermal Resistance, Junction to Ambient | RθJA | 521 | °C/W | TA = +25°C (Note 5) |
| Total Power Dissipation | PD | 300 | mW | TA = +25°C (Note 6) |
| Thermal Resistance, Junction to Ambient | RθJA | 420 | °C/W | TA = +25°C (Note 6) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C | |
| Zero Gate Voltage Drain Current | IDSS | 1.0 | µA | VDS = 30V, VGS = 0V |
| Gate-Body Leakage | IGSS | ±10 | µA | VGS = ±20V, VDS = 0V |
| Gate Threshold Voltage | VGS(TH) | 0.8 - 1.5 | V | VDS = 3V, ID = 100µA |
| Diode Forward Voltage | VSD | 1.2 | V | VGS = 0V, IS = 115mA |
| Input Capacitance | Ciss | 48 | pF | VDS = 5V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 11 | pF | VDS = 5V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 8 | pF | VDS = 5V, VGS = 0V, f = 1.0MHz |
| Total Gate Charge (VGS = 4.5V) | Qg | 0.55 | nC | VGS = 10V, VDS = 10V, ID = 250mA |
| Total Gate Charge (VGS = 10V) | Qg | 1.23 | nC | VGS = 10V, VDS = 10V, ID = 250mA |
| Gate-Source Charge | Qgs | 0.14 | nC | VGS = 10V, VDS = 10V, ID = 250mA |
| Gate-Drain Charge | Qgd | 0.14 | nC | VGS = 10V, VDS = 10V, ID = 250mA |
| Turn-On Delay Time | tD(ON) | 2.9 | ns | VDD = 30V, ID = 0.2A, VGEN = 10V, RGEN = 25Ω |
| Turn-On Rise Time | tR | 2.6 | ns | VDD = 30V, ID = 0.2A, VGEN = 10V, RGEN = 25Ω |
| Turn-Off Delay Time | tD(OFF) | 18.2 | ns | VDD = 30V, ID = 0.2A, VGEN = 10V, RGEN = 25Ω |
| Turn-Off Fall Time | tF | 13.6 | ns | VDD = 30V, ID = 0.2A, VGEN = 10V, RGEN = 25Ω |
| Case | SOT523 | |||
| Weight (Approximate) | 0.002 | grams | ||
| Packaging (3,000/Tape & Reel) | DMN33D8LTQ-7 | SOT523 | ||
| Packaging (10,000/Tape & Reel) | DMN33D8LTQ-13 | SOT523 |
Package Outline Dimensions (SOT523)
All Dimensions in mm
| Dim | Min | Max | Typ |
|---|---|---|---|
| A1 | 0.00 | 0.10 | 0.05 |
| A2 | 0.60 | 0.80 | 0.75 |
| A3 | 0.45 | 0.65 | 0.50 |
| b | 0.15 | 0.30 | 0.22 |
| c | 0.10 | 0.20 | 0.12 |
| D | 1.50 | 1.70 | 1.60 |
| E | 1.45 | 1.75 | 1.60 |
| E1 | 0.75 | 0.85 | 0.80 |
| e | 0.50 BSC | ||
| e1 | 0.90 | 1.10 | 1.00 |
| L | 0.20 | 0.40 | 0.33 |
| a | 0° | 8° | |
Suggested Pad Layout (SOT523)
Dimensions in mm
| Dimension | Value |
|---|---|
| C | 1.29 |
| X | 0.40 |
| X1 | 0.70 |
| Y | 0.51 |
| Y1 | 1.80 |
2412251120_DIODES-DMN33D8LTQ-13_C5441039.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
