Plastic Encapsulated NPN Transistor ElecSuper SS8050 with 40V Collector Base Voltage and 1500mA Current

Key Attributes
Model Number: SS8050
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-
Mfr. Part #:
SS8050
Package:
SOT-23
Product Description

Product Overview

The SS8050 is a plastic-encapsulated NPN transistor from ElecSuper, designed with a VCBO of 40V and an IC of 1500mA. It offers high stability and reliability, making it suitable for various electronic applications. This transistor is complementary to the SS8550 and features a power dissipation of 300mW. It is housed in a compact SOT-23 small outline plastic package.

Product Attributes

  • Brand: ElecSuper
  • Model: SS8050
  • Package Type: SOT-23 Plastic-Encapsulate
  • Transistor Type: NPN
  • Complementary to: SS8550
  • Material: Epoxy UL: 94V-0

Technical Specifications

Parameter Symbol Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified)
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 5 V
Collector Current-Continuous IC 1500 mA
Collector Power Dissipation PC 300 mW
Junction Temperature Tj 150
Storage Temperature TSTG -55 150
Thermal Resistance (Junction to Ambient) RJA 417 /W
Electrical Characteristics (At TA = 25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE=100uA, IC=0 5 V
Collector cut-off current ICEO VCE=20V, IB=0 100 nA
Collector cut-off current ICBO VCB=40V, IE=0 100 nA
Emitter cut-off current IEBO VEB=5V, IC=0 100 nA
DC current gain hFE1 VCE=1V, IC=100mA 120 400
DC current gain hFE2 VCE=1V, IC=800mA 40
Collector-emitter saturation voltage VCE(sat) IC=800mA, IB=80mA 0.50 V
Base-emitter saturation voltage VBE(sat) IC=800mA, IB=80mA 1.20 V
Transition frequency fT VCE=10V, IC=50mA, f=30MHz 100 MHz
hFE Classification
Rank Range
L 120~200
H 200~350
J 300~400
Dimensions and Patterns (SOT-23)
Symbol Dimensions (mm) Min. Dimensions (mm) Max. Symbol Dimensions (mm) Min. Dimensions (mm) Max. Unit
A 0.900 1.150 E1 2.250 2.550 mm
A1 0.900 1.050 e 0.950 (TYP)
b 0.300 0.500 e1 1.800 2.000
c 0.080 0.150 L 0.550 (REF)
D 2.800 3.000 L1 0.300 0.500
E 1.200 1.400 0 8

2410121717_ElecSuper-SS8050_C5249676.pdf

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