silicon thyristor DIODES SD1A150A with 120 volts peak repetitive off state voltage and compact SMA package

Key Attributes
Model Number: SD1A150A
Product Custom Attributes
Holding Current (Ih):
60mA
Voltage - On State(Vtm):
1.5V
Current - On State(It(RMS)):
1A
Peak Off - State Voltage(Vdrm):
120V
Current - Surge(Itsm@f):
280A
Operating Temperature:
-40℃~+125℃
Mfr. Part #:
SD1A150A
Package:
SMA
Product Description

Product Overview

The SD1A150A(LS) is a high voltage silicon unidirectional thyristor designed for applications requiring reliable overvoltage protection. It features a breakover voltage (VBO) range of 142 to 157 Vdc and a repetitive off-state voltage (VDRM) of 120V. With a compact SMA package for space-saving designs and a low holding current (IH) under 60mA, this device is suitable for gas igniters and other high-voltage switching applications. It is also RoHS compliant and a "Green" device, free from Halogen and Antimony.

Product Attributes

  • Brand: Diodes Incorporated
  • Product Type: SIDAC HIGH VOLTAGE SILICON UNIDIRECTIONAL THYRISTORS
  • Package: SMA (DO-214AC)
  • Material: Molded plastic
  • Certifications: RoHS Compliant, Halogen and Antimony Free ("Green" Device)

Technical Specifications

ParameterSymbolValueUnitNotes
MAXIMUM RATINGS
Peak repetitive off-state voltageVDRM120VoltsTJ= -40 to +125C, Sine Wave, 50 to 60Hz
On-state RMS currentIT(RMS)1AmpTL= 80C, all conduction angles
Peak non-repetitive surge currentITSM280AmpsTa=25C, pulse width to = 10us, f=5Hz sine wave, repetitive peak value
Maximum lead Solder TemperatureTL260CLead Length 1/16 from Case, 10s Max
Operating junction temperature rangeTJ-40 ~ +125C
Storage temperature rangeTSTG-40 ~ +150C
THERMAL CHARACTERISTICS
Typical thermal resistance junction to caseRthJC15C/WTYP.
OFF CHARACTERISTICS
Peak repetitive forward or reverse blocking currentIDRM10uAMAX, VDRM=120V (50 to 60Hz)
ON CHARACTERISTICS
Peak On-State VoltageVTM1.5VoltsMAX, IT = 1A
Breakover VoltageVBO142 - 157VoltsMIN/MAX, IBO = 5uA
Break over currentIBO200uAMAX
Holding currentIH60mAMAX
Switching resistanceRS0.1kMIN
DYNAMIC CHARACTERISTICS
Critical rate of rise of on-state currentdi/dt80A/sTYP.

2504101957_DIODES-SD1A150A_C17342567.pdf

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