Power Switching Device ElecSuper AO4407 P Channel MOSFET with Low Leakage Current and Rugged Build
Key Attributes
Model Number:
AO4407
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
200pF
Number:
1 P-Channel
Output Capacitance(Coss):
235pF
Input Capacitance(Ciss):
1.78nF
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
46nC@10V
Mfr. Part #:
AO4407
Package:
SOP8
Product Description
Product Overview
The AO4407 is a P-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent on-resistance (RDS(ON)) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This device is designed for fast switching and features a high-density cell design for low RDS(on). It is reliable, rugged, avalanche rated, and has low leakage current.
Product Attributes
- Brand: ElecSuper
- Model: AO4407
- Package: SOP8
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TA=25C | -12 | A | ||
| TA=100C | -10 | A | ||||
| Maximum Power Dissipation | PD | TA=25C | 3.1 | W | ||
| TA=100C | 2.0 | W | ||||
| Pulsed Drain Current | IDM | -60 | A | |||
| Avalanche Current, Single Pulsed | IAS | Tj=25,VDD=-30V,VG=-10V,L=0.3mH,Rg=25 | -22 | A | ||
| Avalanche Energy, Single Pulsed | EAS | Tj=25,VDD=-30V,VG=-10V,L=0.3mH,Rg=25 | 72 | mJ | ||
| Operating Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | Tstg | -55 | +150 | C | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1 | -1.5 | -2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-12A | 9.5 | 13 | m | |
| VGS=-4.5V, ID=-7A | 14 | 17 | m | |||
| Forward Transconductance | gFS | VDS=-5.0V, ID=-10A | 40 | S | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS =-15V | 1780 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS =-15V | 235 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS =-15V | 200 | pF | ||
| Gate Resistance | Rg | f=1MHZ | 6.0 | |||
| Total Gate Charge | QG(TOT) | VGS=-10V, VDS=-15V, ID=-15A | 46 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-10V, VDS=-15V, ID=-15A | 1.0 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-10V, VDS=-15V, ID=-15A | 1.4 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-15V, RL=1, RG=3 | 8 | ns | ||
| Rise Time | tr | VGS=-10V, VDS=-15V, RL=1, RG=3 | 27 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDS=-15V, RL=1, RG=3 | 68 | ns | ||
| Fall Time | tf | VGS=-10V, VDS=-15V, RL=1, RG=3 | 39 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=-1.0A | -0.7 | -1 | V | |
2504101957_ElecSuper-AO4407_C5224298.pdf
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