Durable P channel MOSFET ElecSuper SI4101DY T1 GE3 ES designed for DC DC conversion and charging circuit

Key Attributes
Model Number: SI4101DY-T1-GE3(ES)
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
12.4A
RDS(on):
14mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
267pF
Output Capacitance(Coss):
323pF
Input Capacitance(Ciss):
2.76nF
Pd - Power Dissipation:
3W
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
SI4101DY-T1-GE3(ES)
Package:
SOP-8
Product Description

Product Overview

The SI4101DY-T1-GE3(ES) is a P-channel MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits. Key features include low RDS(ON), fast switching, high-density cell design, and avalanche rating.

Product Attributes

  • Brand: ElecSuper
  • Material: Halogen free
  • Certifications: UL 94V-0

Technical Specifications

ParameterSymbolTest ConditionsMin.Typ.Max.Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown VoltageBVDSSVGS=0V, ID=-250uA-30V
Zero Gate Voltage Drain CurrentIDSSVGS=0V, VDS=-30V-1uA
Gate-to-source Leakage CurrentIGSSVGS=20V, VDS=0V100nA
ON CHARACTERISTICS
Gate Threshold VoltageVGS(TH)VGS=VDS, ID=-250uA-1.0-1.4-2.0V
Drain-to-source On-resistanceRDS(on)VGS=-10V, ID=-12A7.511.5m
Drain-to-source On-resistanceRDS(on)VGS=-4.5V, ID=-10A9.514m
Forward TransconductancegFSVDS=-5V, ID=-12A1100S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input CapacitanceCISSVGS=0V, VDS =-15V f=1MHz2760pF
Output CapacitanceCOSSVGS=0V, VDS =-15V f=1MHz323pF
Reverse Transfer CapacitanceCRSSVGS=0V, VDS =-15V f=1MHz267pF
Total Gate ChargeQG(TOT)VGS=-10V, VDS=-15V ID=-12A35nC
Gate-to-Source ChargeQGSVGS=-10V, VDS=-15V ID=-12A10
Gate-to-Drain ChargeQGDVGS=-10V, VDS=-15V ID=-12A10.5
SWITCHING CHARACTERISTICS
Turn-On Delay Timetd(ON)VGS=-10V, VDS=-15V ID=-12A, RG=311ns
Rise TimetrVGS=-10V, VDS=-15V ID=-12A, RG=313.3ns
Turn-Off Delay Timetd(OFF)VGS=-10V, VDS=-15V ID=-12A, RG=374ns
Fall TimetfVGS=-10V, VDS=-15V ID=-12A, RG=335ns
BODY DIODE CHARACTERISTICS
Forward VoltageVSDVGS=0V, ISD=-1A-0.45-1.5V

2504101957_ElecSuper-SI4101DY-T1-GE3-ES_C42444331.pdf

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