Power Conversion MOSFET ElecSuper TPH1R403NL ES N Channel Featuring Low Gate Charge and Excellent RDS
Key Attributes
Model Number:
TPH1R403NL-ES
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
120A
RDS(on):
1.15mΩ@10V;1.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
140pF
Number:
1 N-channel
Output Capacitance(Coss):
1.71nF
Input Capacitance(Ciss):
4.05nF
Pd - Power Dissipation:
120W
Gate Charge(Qg):
68nC@10V
Mfr. Part #:
TPH1R403NL-ES
Package:
PDFN5x6-8L
Product Description
Product Overview
The TPH1R403NL-ES is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This device is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Material: Halogen free
- Certifications: UL 94V-0
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25℃ | 120 | A | ||
| Continuous Drain Current | ID | TC=100℃ | 78 | A | ||
| Maximum Power Dissipation | PD | TC=25℃ | 120 | W | ||
| Maximum Power Dissipation | PD | TC=100℃ | 48 | W | ||
| Pulsed Drain Current | IDM | 480 | A | |||
| Avalanche Current | IAS | L=0.5mH | 43 | A | ||
| Avalanche energy | EAS | 462 | mJ | |||
| Operating Junction Temperature | TJ | 150 | ℃ | |||
| Lead Temperature | TL | 260 | ℃ | |||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.2 | 1.5 | 2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=20A | 1.15 | 1.5 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=20A | 1.5 | 2.2 | mΩ | |
| Forward Trans conductance | gFS | VDS=5.0V, ID=20A | 150 | S | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=15V | 4050 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=15V | 1710 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=15V | 140 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=10V, ID=30A | 68 | nC | ||
| Gate-to-Source Charge | QGS | VGS=10V, VDS=10V, ID=30A | 12 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=10V, VDS=10V, ID=30A | 17 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=15V, ID=50A, RG=1Ω | 18 | ns | ||
| Rise Time | tr | VGS=10V, VDS=15V, ID=50A, RG=1Ω | 11 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=15V, ID=50A, RG=1Ω | 64 | ns | ||
| Fall Time | tf | VGS=10V, VDS=15V, ID=50A, RG=1Ω | 11 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=20A | 0.45 | 1.2 | V | |
2504101957_ElecSuper-TPH1R403NL-ES_C19725091.pdf
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