ElecSuper IRFR3410TRPBF ES Power MOSFET N Channel with Low RDS ON and Excellent Avalanche Capability
Key Attributes
Model Number:
IRFR3410TRPBF(ES)
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
18A
RDS(on):
37mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
76pF
Output Capacitance(Coss):
92pF
Pd - Power Dissipation:
35W
Input Capacitance(Ciss):
1.982nF
Gate Charge(Qg):
20nC@4.5V
Mfr. Part #:
IRFR3410TRPBF(ES)
Package:
TO-252
Product Description
Product Description
The IRFR3410TRPBF(ES) is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and features a high-density cell design for low RDS(on), reliability, ruggedness, avalanche rating, and low leakage current.
Product Attributes
- Brand: ElecSuper
- Material: Halogen free
- Certifications: UL 94V-0
- Product Type: Standard Product
- Lead Free: Pb-free
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25°C | 18 | A | ||
| Continuous Drain Current | ID | TC=75°C | 14 | A | ||
| Pulsed Drain Current | IDM | 72 | A | |||
| Maximum Power Dissipation | PD | 35 | W | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | to | 150 | °C | |
| Thermal Characteristics | ||||||
| Junction-to-Case Thermal Resistance | RθJC | Single Operation | 3.6 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.5 | 2.2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=10A | 37 | 48 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=6A | 39 | 55 | mΩ | |
| Forward transconductance | gfs | VDS=5V, ID=10A | 40 | S | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | 1982 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=25V | 92 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=25V | 76 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=80V, ID=10A | 20 | nC | ||
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=80V, ID=10A | 3.1 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=80V, ID=10A | 14 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=4.5V, VDS=80V, ID=10A, RG=3Ω | 12 | ns | ||
| Rise Time | tr | VGS=4.5V, VDS=80V, ID=10A, RG=3Ω | 93 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=4.5V, VDS=80V, ID=10A, RG=3Ω | 40 | ns | ||
| Fall Time | tf | VGS=4.5V, VDS=80V, ID=10A, RG=3Ω | 72 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=10A | 1.5 | V | ||
2504101957_ElecSuper-IRFR3410TRPBF-ES_C42412346.pdf
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