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quality Plastic encapsulated PNP transistor Doeshare S8550 in SOT23 package for general purpose electronics factory
quality Plastic encapsulated PNP transistor Doeshare S8550 in SOT23 package for general purpose electronics factory

Plastic encapsulated PNP transistor Doeshare S8550 in SOT23 package for general purpose electronics

Key Attributes
Model Number: S8550
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
150MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Mfr. Part #:
S8550
Package:
SOT-23
Product Description

Product Overview

The S8550 is a PNP transistor in a SOT-23 plastic-encapsulated package, designed as a complementary component to the S8050. It offers a power dissipation of 300mW, providing high stability and reliability. This general-purpose transistor is suitable for various electronic applications.

Product Attributes

  • Brand: DOESHARE
  • Package Type: SOT-23 Plastic-Encapsulate Transistors
  • Material: Epoxy UL: 94V-0
  • Mounting Position: Any
  • Marking: 2TY

Technical Specifications

Parameter Symbol Condition Value Unit
Maximum Ratings & Thermal Characteristics (TA = 25C unless otherwise noted)
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -25 V
Emitter-Base Voltage VEBO -5 V
Collector Current-Continuous IC -500 mA
Collector Power Dissipation PC 300 mW
Junction Temperature Tj 150
Storage Temperature Tstg -55 to +150
Thermal resistance From junction to ambient RJA 417 /W
Electrical Characteristics (TA = 25C unless otherwise noted)
Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE=100uA, IC=0 -5 V
Collector cut-off current ICEO VCE=20V, IB=0 -100 nA
Collector cut-off current ICBO VCB=40V, IE=0 -100 nA
Emitter cut-off current IEBO VEB=5V, IC=0 -100 nA
DC current gain hFE(1) VCE=1V, IC=50mA 120 to 400
DC current gain hFE(2) VCE=1V, IC=500mA 50
Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA -0.60 V
Base-emitter saturation voltage VBE(sat) IC=500mA, IB=50mA -1.20 V
Transition frequency fT VCE=6V, IC=20mA,f=30MHz 150 MHz
CLASSIFICATION OF hFE(1)
RANK L 120-200
RANK H 200-350
RANK J 300-400

2411220230_Doeshare-S8550_C2931720.pdf

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