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quality NPN Silicon Transistor DoesShare DTC143ZE Featuring Monolithic Bias Resistor Network for Circuit Layout factory
quality NPN Silicon Transistor DoesShare DTC143ZE Featuring Monolithic Bias Resistor Network for Circuit Layout factory

NPN Silicon Transistor DoesShare DTC143ZE Featuring Monolithic Bias Resistor Network for Circuit Layout

Key Attributes
Model Number: DTC143ZE
Product Custom Attributes
Resistor Ratio:
0.1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTC143ZE
Package:
SOT-523
Product Description

Product Overview

The DTC114EE to DTC123JE series are NPN Silicon Surface Mount Transistors featuring a monolithic bias resistor network. These Bias Resistor Transistors (BRTs) are designed to replace single transistors with external bias resistors, simplifying circuit design, reducing board space, and lowering component count. They are ideal for low power surface mount applications and are RoHS Compliant with Green EMC and Matte Tin lead finish.

Product Attributes

  • Brand: DOESHARE
  • Technology: NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
  • Certifications: RoHS Compliant, Green EMC
  • Lead Finish: Matte Tin (Sn)
  • Package: SOT-523 (SC-75A)

Technical Specifications

Model Device Marking R1 (K) R2 (K) Weight (approx.)
DTC114EE 24 10 10 0.002g
DTC124EE 25 22 22 0.002g
DTC144EE 26 47 47 0.002g
DTC114YE 64 10 47 0.002g
DTC114TE 04 10 0.002g
DTC143TE 03 4.7 0.002g
DTC123EE 22 2.2 2.2 0.002g
DTC143EE 23 4.7 4.7 0.002g
DTC143ZE E23 4.7 47 0.002g
DTC124XE 45 22 47 0.002g
DTC123JE E42 2.2 47 0.002g
Parameter Condition Min Typ Max Unit
Absolute Maximum Ratings
Collector-Base Voltage (VCBO) TA = 25C - - 50 V
Collector-Emitter Voltage (VCEO) TA = 25C - - 50 V
Collector Current (IC) TA = 25C - - 100 mA
Power Dissipation (PD) TA = 25C - - 150 mW
Thermal Resistance (RJA) Junction to Ambient - 600 - C/W
Junction & Storage Temperature Range (TJ, TSTG) - -55 - +150 C
Electrical Characteristics (TA = 25C unless otherwise noted)
Collector-Base Cutoff Current (ICBO) VCB =50V, IE =0A - - 100 nA
Collector-Emitter Cutoff Current (ICEO) VCE =50V, IB =0A - - 500 nA
Emitter-Base Cutoff Current (IEBO) VEB =6.0V, IC =0A - - 0.50 mA
Collector-Base Breakdown Voltage (V(BR)CBO) IC =10uA, IE =0A 50 - - Volts
Collector-Emitter Breakdown Voltage (V(BR)CEO) (Note 1) IC =2.0mAA, IB =0A 50 - - Volts
On Characteristics (Note 1)
DC Current Gain (HFE) VCE =10V, IC =5.0mA 35 - 350 -
Collector-Emitter Saturation Voltage (VCE(sat)) IC=10mA, IB=0.3mA (various models) - - 0.25 Volts
Output Voltage (on) (VOL) RL= 1.0K, VCC=5.0V, VB=2.5V (various models) - - 0.20 Volts
Output Voltage (on) (VOH) RL= 1.0K, VCC=5.0V, VB=0.5V (various models) 4.9 - - Volts
Resistor Values (TA = 25C unless otherwise noted)
R1 Input Resistor (Model specific) 1.5 - 10 K
R1/R2 Resistor Ratio (Model specific) 0.038 - 1.2 -

Note 1: Pulse Test. Pulse width <300us, Duty cycle < 2.0%.

Note 2: Package outline conforms to JEITA EAIJ ED-7500A SC-75A. Dimensions are exclusive of Burrs, Mold Flash & Tie Bar extrusions.


2410121513_Doeshare-DTC143ZE_C2931637.pdf

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