High Density Cell Design ElecSuper AON7400A ES N Channel MOSFET for Charging and Conversion Circuits
Key Attributes
Model Number:
AON7400A(ES)
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
40A
RDS(on):
12mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
140pF
Input Capacitance(Ciss):
876pF
Output Capacitance(Coss):
155pF
Pd - Power Dissipation:
30W
Gate Charge(Qg):
11nC@4.5V
Mfr. Part #:
AON7400A(ES)
Package:
PDFN3X3-8L
Product Description
Product Overview
The AON7400A(ES) is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for applications such as DC-DC conversion, power switching, and charging circuits, offering high density cell design for low on-resistance and a reliable, rugged construction.
Product Attributes
- Brand: ElecSuper
- Product Name: AON7400A(ES)
- Package: PDFN3X3-8L
- Material: Halogen free, Pb-free
- Certifications: UL 94V-0
- Marking: ESN7466/lot
- Packing: Tape & Reel, 5,000 PCS per reel
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25C | 40 | A | ||
| Continuous Drain Current | ID | TC=75C | 31 | A | ||
| Maximum Power Dissipation | PD | TC=25C | 30 | W | ||
| Maximum Power Dissipation | PD | TC=75C | 18 | W | ||
| Pulsed Drain Current | IDM | 160 | A | |||
| Avalanche Current, Single Pulsed | IAS | a | 18 | A | ||
| Avalanche Energy, Single Pulsed | EAS | a | 48 | mJ | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Thermal Resistance | ||||||
| Junction-to-Ambient Thermal Resistance | RJA | t ≤ 10 s | 40 | °C/W | ||
| Junction-to-Case Thermal Resistance | RJC | Steady State | 4.2 | |||
| Electrical Characteristics | ||||||
| OFF CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.35 | 1.8 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=18A | 6.5 | 12 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=15A | 10 | 18 | mΩ | |
| Forward Transconductance | gFS | VDS=5.0V, ID=18A | 19 | 40 | S | |
| CHARGES, CAPACITANCES AND GATE RESISTANCE | ||||||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=15V | 876 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=15V | 155 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=15V | 140 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=15V, ID=6A | 11 | nC | ||
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=15V, ID=6A | 2.7 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=15V, ID=6A | 5.1 | nC | ||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=20V, ID=6A, RG=6Ω | 4.7 | ns | ||
| Rise Time | tr | VGS=10V, VDS=20V, ID=6A, RG=6Ω | 35 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=20V, ID=6A, RG=6Ω | 35 | ns | ||
| Fall Time | tf | VGS=10V, VDS=20V, ID=6A, RG=6Ω | 15 | ns | ||
| BODY DIODE CHARACTERISTICS | ||||||
| Forward Voltage | VSD | VGS=0V, IS=1.9A | 0.7 | 1.5 | V | |
2504101957_ElecSuper-AON7400A-ES_C42434123.pdf
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