Power switching and DC DC conversion ElecSuper NDS7002A ES N Channel MOSFET with low gate charge
Key Attributes
Model Number:
NDS7002A-ES
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
380mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.06Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
8pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
45pF@10V
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
2nC@10V
Mfr. Part #:
NDS7002A-ES
Package:
SOT23-3L
Product Description
NDS7002A-ES
The NDS7002A-ES is an N-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Material: Halogen free
- Certifications: UL 94V-0
- Package: SOT23-3L
- Marking: 72KA
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25℃ | 0.38 | A | ||
| Continuous Drain Current | ID | TA=100℃ | 0.25 | A | ||
| Maximum Power Dissipation | PD | 350 | mW | |||
| Pulsed Drain Current | IDM | a | 1.5 | A | ||
| Operating Junction Temperature | TJ | 150 | ℃ | |||
| Lead Temperature | TL | 260 | ℃ | |||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | ||
| Junction-to-Ambient Thermal Resistance | RθJA | Single Operation | 300 | ℃/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=10mA | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±10 | uA | ||
| Forward Transconductance | gfs | VDS=10V, ID=0.1A | 0.24 | S | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 0.8 | 1.5 | 2.5 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=0.3A | 1.75 | 3 | ℉ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=0.2A | 2.06 | 4 | ℉ | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=10V | 30.5 | 45 | pF | |
| Output Capacitance | COSS | 5.5 | 10 | pF | ||
| Reverse Transfer Capacitance | CRSS | 4.1 | 8 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=30V, ID=0.2A | 1.12 | 2 | nC | |
| Gate-to-Source Charge | QGS | 0.1 | 0.2 | |||
| Gate-to-Drain Charge | QGD | 0.23 | 0.5 | |||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=30V, ID=0.2A, RG=6℉ | 3 | 6 | ns | |
| Rise Time | tr | 5 | 10 | |||
| Turn-Off Delay Time | td(OFF) | 14 | 27 | |||
| Fall Time | tf | 9 | 17 | |||
| Forward Voltage | VSD | VGS=0V, IS=1A | 1.5 | V | ||
2411220030_ElecSuper-NDS7002A-ES_C5224210.pdf
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