Power MOSFET DoesShare DN2302 N Channel device suitable for LED drivers and power switching circuits
Key Attributes
Model Number:
DN2302
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.5A
RDS(on):
45mΩ@2.5V
Operating Temperature -:
-50℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
42pF
Number:
-
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
280pF@10V
Gate Charge(Qg):
4.7nC@4.5V
Mfr. Part #:
DN2302
Package:
SOT-23
Product Description
DN2302 N-Channel MOSFET
The DN2302 is an N-Channel MOSFET designed with Trench Power MOSFET technology, offering high power and current handling capability. Its high-density cell design contributes to low RDS(ON) values. This device is suitable for applications such as DC-DC converters, LED drivers, and switching circuits.
Product Attributes
- Brand: DOESHARE
- Device Type: DN2302
- Channel Type: N-Channel
- Technology: Trench Power MOSFET
Technical Specifications
| Parameters | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | |
| Gate-Source Voltage | VGS | ±10 | V | |
| Continuous Drain Current | ID | 4.5 | A | |
| Pulsed Drain Current | IDM | 18 | A | (note 1) |
| Maximum Power Dissipation | PD | 1.2 | W | |
| Thermal Resistance from Junction to Ambient | RθJA | 100 | °C/W | (note 2) |
| Junction and Storage Temperature | TJ, TSTG | -50~+150 | °C | |
| Drain-source breakdown voltage | V(BR)DSS | 20 | V | VGS = 0V, ID = 250µA |
| Zero gate voltage drain current | IDSS | 1 | µA | VDS = 20V,VGS = 0V |
| Gate-body leakage current | IGSS | ±100 | nA | VGS = ±10V, VDS = 0V |
| Gate threshold voltage | VGS(th) | 0.4 - 1.0 | V | VDS =VGS, ID = 250µA (note 3) |
| Drain-source on-resistance | RDS(on) | <35 | mΩ | VGS = 4.5V, ID = 4A (note 3) |
| Drain-source on-resistance | RDS(on) | <45 | mΩ | VGS = 2.5V, ID = 1A (note 3) |
| Diode forward voltage | VSD | 0.74 - 1.2 | V | IS= 2A, VGS = 0V (note 3) |
| Input Capacitance | Ciss | 280 | pF | VDS= 10V,VGS=0V, f =1MHz (note4) |
| Output Capacitance | Coss | 46 | pF | (note 4) |
| Reverse Transfer Capacitance | Crss | 42 | pF | (note 4) |
| Turn-on delay time | td(on) | 11 | ns | VDD= 10V,ID= 4A,RG= 3.3Ω, VGS= 4.5V (note 4) |
| Turn-on rise time | tr | 35 | ns | (note 4) |
| Turn-off delay time | td(off) | 25 | ns | (note 4) |
| Turn-off fall time | tf | 32 | ns | (note 4) |
| Total Gate Charge | Qg | 4.7 | nC | VDS= 10V,ID=3A, VGS=5V (note 4) |
| Gate-Source Charge | Qgs | 0.6 | nC | (note 4) |
| Gate-Drain Charge | Qg d | 1.7 | nC | (note 4) |
Device Marking Code
- DN2302 S2 or A2SHB
Package Information
- Package Type: SOT-23
2410122003_Doeshare-DN2302_C2931749.pdf
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