Low on resistance P channel MOSFET transistor DOWO AO3401 suitable for load switching applications
Product Overview
The AO3401 is a P-Channel Enhancement Mode Field Effect Transistor in a SOT-23 package. It features a high-density cell design for extremely low RDS(on) and exceptional on-resistance and maximum DC current capability, making it suitable for load/power switching and interfacing switching applications.
Product Attributes
- Package: SOT-23
- Epoxy UL Flammability Rating: 94V-0
- Mounting Position: Any
- Marking: R1
- Website: www.dowosemi.cn
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | V | VGS=0V, ID=-250uA |
| VGS=-10V, ID=-4.2A | ||||
| VGS=-4.5V, ID=-4A | ||||
| Gate-Source Voltage | VGS | 12 | V | |
| Continuous Drain Current | ID | -4.2 | A | |
| Power Dissipation | PD | 350 | mW | TA = 25 |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature | Tstg | -50-+150 | ||
| Thermal Resistance (Junction to Ambient) | RJA | 357 | /W | note 2 |
| Zero Gate Voltage Drain current | IDSS | -1 | uA | VDS=-24V, VGS=0V |
| Gate-body Leakage | IGSS | 100 | nA | VDS=12V, VDS=0V |
| Drain-Source On-Resistance | RDS(ON) | 50-65 | m | VGS=-10V, ID=-4.2A |
| 60-75 | VGS=-4.5V, ID=-4A | |||
| 75-90 | VGS=-2.5V, ID=-1A | |||
| Forward trans conductance | gfs | 7 | S | VDS=-5V, ID=-5A |
| Gate-Threshold voltage | V GS (th) | -0.7 -0.9 -1.3 | V | VDS=VGS, ID=-250uA |
| Input capacitance | Ciss | 954 | pF | VDS=-15V, VGS=0V,f=1MHz |
| Output capacitance | Coss | 115 | pF | |
| Reverse Transfer capacitance | Crss | 77 | pF | |
| Turn-on Time | td(on) | 6.3 | ns | VGS=-10V, RL=3.6, VDS=-15V, RGEN=6 |
| Rise time | tr | 3.2 | ||
| Turn-off Time | td(off) | 38.2 | ||
| Fall time | tf | 12 | ||
| Diode forward voltage | VSD | -1.0 | V | IS=-1A, VGS=0V (note 1) |
2410121700_DOWO-AO3401_C5299438.pdf
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