ElecSuper AO6405 ES P channel MOSFET with trench technology delivering low gate charge and operation
Key Attributes
Model Number:
AO6405(ES)
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.7A
RDS(on):
60mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
65pF
Input Capacitance(Ciss):
520pF
Output Capacitance(Coss):
100pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
11nC@10V
Mfr. Part #:
AO6405(ES)
Package:
SOT-23-6L
Product Description
Product Overview
The AO6405(ES) is a P-channel enhancement MOS Field Effect Transistor utilizing advanced trench technology and design to achieve excellent RDS(ON) with low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuit applications.
Product Attributes
- Brand: ElecSuper
- Package: SOT23-6L
- Material: Halogen free, Pb-free
- Certifications: UL 94V-0
- Origin: Incorporated
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | -30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25°C | -4.7 | A | ||
| Continuous Drain Current | ID | TA=75°C | -3.6 | A | ||
| Maximum Power Dissipation | PD | TA=25°C | 2 | W | ||
| Maximum Power Dissipation | PD | TA=75°C | 1.2 | W | ||
| Pulsed Drain Current | IDM | -18.8 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Thermal Characteristics | ||||||
| Junction-to-Ambient Thermal Resistance | RθJA | t ≤ 10 s | 47.5 | 62.5 | °C/W | |
| Junction-to-Case Thermal Resistance | RθJC | Steady State | 37 | 50 | °C/W | |
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | µA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.0 | -1.5 | -2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-4.7A | 46 | 60 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-4A | 62 | 80 | mΩ | |
| Forward Transconductance | gFS | VDS=-5.0V, ID=-4.7A | 40 | S | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=-15V | 520 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=-15V | 100 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=-15V | 65 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=-10V, VDS=-15V, ID=-4.7A | 9.2 | 11 | nC | |
| Threshold Gate Charge | QG(TH) | VGS=-10V, VDS=-15V, ID=-4.7A | 4.6 | 6 | nC | |
| Gate-to-Source Charge | QGS | VGS=-10V, VDS=-15V, ID=-4.7A | 1.6 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-10V, VDS=-15V, ID=-4.7A | 2.2 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-15V, RL=3Ω, RG=3Ω | 7.5 | ns | ||
| Rise Time | tr | VGS=-10V, VDS=-15V, RL=3Ω, RG=3Ω | 5.5 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDS=-15V, RL=3Ω, RG=3Ω | 19 | ns | ||
| Fall Time | tf | VGS=-10V, VDS=-15V, RL=3Ω, RG=3Ω | 7 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=-1.0A | -0.7 | -1.5 | V | |
2504101957_ElecSuper-AO6405-ES_C42434118.pdf
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