DoesShare DP6B20KC P Channel Small Signal MOSFET with Low Gate Source Voltage and Compact SOT883 Package
Key Attributes
Model Number:
DP6B20KC
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
600mA
Operating Temperature -:
-40℃~+150℃
RDS(on):
800mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.2pF
Number:
1 P-Channel
Output Capacitance(Coss):
6.4pF
Input Capacitance(Ciss):
39pF
Pd - Power Dissipation:
480mW
Gate Charge(Qg):
1.1nC@4.5V
Mfr. Part #:
DP6B20KC
Package:
SOT-883-3
Product Description
Product Overview
The DP6B20KC is a P-Channel Small Signal MOSFET designed for various switching applications. It offers low RDS(on) at gate-source voltages of -4.5V and -3.3V, making it suitable for logic-level control. Key features include ESD protection and a compact SOT-883 package. This RoHS compliant component is ideal for high-side load switching, general switching circuits, high-speed line drivers, and relay drivers.
Product Attributes
- Brand: DOESHARE
- Product Type: P Channel Small Signal MOSFET
- Package: SOT-883
- Certifications: PbFree, RoHS Compliant
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Gate-Source Voltage (VGS) | (TA=25 unless otherwise noted) | 8 | V | ||
| Drain-Source Breakdown Voltage (V(BR)DSS) | -20 | V | |||
| Maximum Junction Temperature (TJ) | 150 | C | |||
| Storage Temperature Range (TSTG) | -50 | 150 | C | ||
| Pulse Drain Current (IDM) | Mounted on Large Heat Sink, Tested, TA =25C | -2.4 | A | ||
| Continuous Drain Current (ID) | TA =25C | -0.6 | A | ||
| Continuous Drain Current (ID) | TA =70C | -0.48 | A | ||
| Maximum Power Dissipation (PD) | TA =25C | 0.3 | W | ||
| Maximum Power Dissipation (PD) | TA =70C | 0.24 | W | ||
| Thermal Resistance Junction-Ambient (RJA) | 400 | C/W | |||
| Static Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (V(BR)DSS) | VGS=0V, ID=-250A | -20 | V | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS=-20V, VGS=0V, (TA=25) | -1 | A | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS=-16V, VGS=0V, (TA=125) | -100 | uA | ||
| Gate-Body Leakage Current (IGSS) | VGS=8V, VDS=0V | 10 | uA | ||
| Gate Threshold Voltage (VGS(TH)) | VDS=VGS, ID=-250A | -0.35 | -0.6 | -1.0 | V |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=-4.5V, ID=-0.5A | 510 | 650 | m | |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=-3.3V, ID=-0.3A | 570 | 700 | m | |
| Drain-Source On-State Resistance (RDS(ON)) | VGS=-2.5V, ID=-0.1A | 600 | 800 | m | |
| Dynamic Electrical Characteristics | |||||
| Input Capacitance (Ciss) | VDS=-10V, VGS=0V, f=1MHz | 39 | pF | ||
| Output Capacitance (Coss) | 6.4 | pF | |||
| Reverse Transfer Capacitance (Crss) | 4.2 | pF | |||
| Total Gate Charge (Qg) | VDS=-10V, ID=-0.5A, VGS=-4.5V | 1.1 | nC | ||
| Gate Source Charge (Qgs) | 0.1 | nC | |||
| Gate Drain Charge (Qgd) | 0.3 | nC | |||
| Turn on Delay Time (td(on)) | VDD=-10V, ID=-0.5A, RG=3.3, VGS=-4.5V | 16 | ns | ||
| Turn on Rise Time (tr) | 32 | ns | |||
| Turn Off Delay Time (td(off)) | 85 | ns | |||
| Turn Off Fall Time (tf) | 68 | ns | |||
| Source Drain Diode Characteristics | |||||
| Source drain current (Body Diode) (ISD) | TA=25 | -0.3 | A | ||
| Forward on voltage (VSD) | Tj=25, ISD=-0.3A, VGS=0V | -0.89 | -1.2 | V | |
2410121629_Doeshare-DP6B20KC_C2931708.pdf
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