Standard silicon TRIACs for controlling loads in motor fan pump circuits Doeshare DT16T35I-BH device

Key Attributes
Model Number: DT16T35I-BH
Product Custom Attributes
Current - Gate Trigger(Igt):
35mA
Current - On State(It(RMS)):
16A
Peak Off - State Voltage(Vdrm):
800V
Mfr. Part #:
DT16T35I-BH
Package:
ITO-220AB-3
Product Description

DT16T Standard TRIACs

The DT16T Standard TRIACs are high commutation performance silicon bidirectional thyristors designed for general-purpose AC switch control. These devices are suitable for controlling loads in motors, fans, pumps, solenoid drivers, LED dimming, and inrush current limiting circuits. They offer three-quadrant triggering and can be controlled by phase angle or on/off triggers. The TRIACs feature a passivated die for reliability, operation up to 125C, and are designed to function without a snubber circuit. They are manufactured using a "Green" molding compound with UL flammability classification 94V-0 and are RoHS II 2015/863/EU compliant.

Product Attributes

  • Brand: DOESHARE
  • Product Type: Standard TRIACs
  • Material: Silicon
  • Certifications: UL flammability classification 94V-0, RoHS II 2015/863/EU compliant
  • Environmental: "Green" molding compound (No Br. Sb. Cl)

Technical Specifications

Parameter Symbol DT16T10T DT16T35T Value Unit Notes
Absolute Ratings
Peak repetitive off-state voltage VDRM, VRRM 800 V (Tj = -40 to 125C, Full sine wave, 50 to 60 Hz; Gate open)
On-stage RMS current IT(RMS) 16 A (Full sine wave, TC = 100C)
Peak non-repetitive surge current ITSM 140 A (one full cycle 60 HZ, Tj = 25C)
Circuit fusing consideration I2T 90 AS (t = 8.3ms)
Operating junction temperature range Tj -40 to +125 C
Storage temperature range TSTG -40 to +150 C
Thermal Characteristics (ITO-220)
Thermal resistance from junction to case Rth(j-C) Max 10 C/W (Without Heatsink)
Junction to ambient (DC) Rth(j-L) Max 9.5 C/W (Without Heatsink)
Maximum lead temperature for soldering TL Max 260 C (1/8 form case for 10 seconds)
Static Characteristics (Tj = 125C)
Threshold Voltage Vto -- 0.95 V
Dynamic resistors Rd -- 30 m
Peak repetitive forward or reverse blocking current IDRM, IRRM Tj = 25C -- -- 5 uA (VAK = rated VDRM and VRRM, gate open)
Tj = 125C -- -- 0.5 mA (VAK = rated VDRM and VRRM, gate open)
ON Characteristics (Tj = 25C)
Peak forward on-state voltage VTM 1.5 1.5 Max V (ITM = 20 A)
Gate trigger voltage VGD 0.25 0.25 Min V (VD= VDRM, RL=100, Tj=125C)
Gate trigger current IGT1, IGT2, IGT3 10 35 Max mA (VAK = 12V, RL=100)
10 35 Max mA (VAK = 12V, RL=100)
10 35 Max mA (VAK = 12V, RL=100)
Gate trigger voltage VGT1, VGT2, VGT3 1 1 Max V (VAK = 12V, RL=100)
1 1 Max V (VAK = 12V, RL=100)
1 1 Max V (VAK = 12V, RL=100)
Holding current IH1, IH3 10 40 Max mA (VAK = 12V, RL=100)
10 40 Max mA (VAK = 12V, RL=100)
10 40 Max mA (VAK = 12V, RL=100)
Latching current IL1, IL2, IL3 25 50 Max mA (VAK = 12V, RL=100)
25 80 Max mA (VAK = 12V, RL=100)
25 50 Max mA (VAK = 12V, RL=100)
Dynamic Characteristics (Tj = 125C)
Critical rate of rise of off-stage voltage dv/dt 500 2000 V/us (VAK = 67% rated VDRM, gate open)
Critical rate of rise of on-state current di/dt(s) 70 70 A/us (VDRM=maximum VDRM)
Critical rate of rise of on-state current di/dt(c) 2.5 4 A/ms (125C, Gate open, without snubber)

2410121656_Doeshare-DT16T35I-BH_C919203.pdf

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