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quality SOT23 Package NPN Transistor ElecSuper M8050 with 40V VCBO and 800mA Continuous Collector Current factory
quality SOT23 Package NPN Transistor ElecSuper M8050 with 40V VCBO and 800mA Continuous Collector Current factory

SOT23 Package NPN Transistor ElecSuper M8050 with 40V VCBO and 800mA Continuous Collector Current

Key Attributes
Model Number: M8050
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
150MHz
Type:
NPN
Current - Collector(Ic):
800mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-
Mfr. Part #:
M8050
Package:
SOT-23
Product Description

Product Overview

The M8050 is an NPN transistor from ElecSuper, designed for general-purpose applications. It features a VCBO of 40V and a continuous collector current (IC) of 800mA, with a power dissipation of 200mW. Packaged in a compact SOT-23 small outline plastic package, this transistor offers high stability and reliability, making it suitable for various electronic circuits.

Product Attributes

  • Brand: ElecSuper
  • Package Type: SOT-23 Plastic-Encapsulate
  • Transistor Type: NPN
  • Material: Epoxy UL: 94V-0
  • Mounting Position: Any

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Absolute Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified)
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 6 V
Collector Current-Continuous IC 800 mA
Collector Power Dissipation PC 200 mW
Junction Temperature Tj 150
Storage Temperature TSTG -55 150
Thermal Resistance (Junction to Ambient) RJA 625 /W
Electrical Characteristics (At TA = 25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE=100uA, IC=0 6 V
Collector cut-off current ICEO VCE=20V, IB=0 100 nA
Collector cut-off current ICBO VCB=35V, IE=0 100 nA
DC current gain hFE(1) VCE=1V, IC=5mA 45
DC current gain hFE(2) VCE=1V, IC=100mA 80 400
DC current gain hFE(3) VCE=1V, IC=800mA 40
Collector-emitter saturation voltage VCE(sat) IC=800mA, IB=80mA 0.50 V
Base -emitter saturation voltage VBE(sat) IC=800mA, IB=80mA 1.20 V
Transition frequency fT VCE=6V, IC=20mA, f=30MHz 150 MHz
hFE Classification
Rank Min Typ Max Unit
L 80 300
H 300 400

Dimensions and Patterns (SOT-23)

Symbol Dimensions (mm) Symbol Dimensions (mm)
Min. Max. Min. Max.
A 0.900 1.150 E1 2.250 2.550
A1 0.900 1.050 e 0.950 (TYP)
b 0.300 0.500 e1 1.800 2.000
c 0.080 0.150 L 0.550 (REF)
D 2.800 3.00 L1 0.300 0.500
E 1.200 1.400 0 8

Note: 1. Controlling dimension: in millimeters. 2. General tolerance: 0.05mm. 3. The pad layout is for reference only. 4. Unit: mm.


2410121717_ElecSuper-M8050_C5334061.pdf

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