ElecSuper ESE30P30K P Channel MOSFET with Trench Technology and Pb Free Environment Friendly Design
Key Attributes
Model Number:
ESE30P30K
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
62A
RDS(on):
8mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
660pF@15V
Input Capacitance(Ciss):
3.5nF@15V
Pd - Power Dissipation:
79W
Gate Charge(Qg):
61nC@10V
Mfr. Part #:
ESE30P30K
Package:
TO-252
Product Description
Product Overview
The ESE30P30K is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This device is Pb-free and halogen-free.
Product Attributes
- Brand: ElecSuper
- Product Name: SuperMOS
- Package: TO-252
- Material: Halogen free
- Certifications: UL 94V-0
- Features: Pb-free, 100% UIS TESTED!
Technical Specifications
| Parameter | Symbol | Conditions | Limit | Unit |
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | BVDSS | - | -30 | V |
| Gate-Source Voltage | VGS | - | ±25 | V |
| Continuous Drain Current | ID | TC=25°C | -62 | A |
| Continuous Drain Current | ID | TC=75°C | -48 | A |
| Maximum Power Dissipation | PD | TC=25°C | 79 | W |
| Maximum Power Dissipation | PD | TC=75°C | 47 | W |
| Pulsed Drain Current | IDM | - | -200 | A |
| Avalanche Current, Single Pulsed | IAS | Tj=25°C, VDD=-30V, VG=-10V, L=0.3mH, Rg=25Ω | -24 | A |
| Avalanche Energy, Single Pulsed | EAS | Tj=25°C, VDD=-30V, VG=-10V, L=0.3mH, Rg=25Ω | 86.4 | mJ |
| Operating Junction Temperature | TJ | - | 150 | °C |
| Storage Temperature Range | Tstg | - | -55 to +150 | °C |
| Thermal Characteristics | ||||
| Junction-to-Ambient Thermal Resistance | RθJA | t ≤ 10 s, Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper | 16 (Typ), 20 (Max) | °C/W |
| Junction-to-Case Thermal Resistance | RθJC | Steady State | 0.9 (Typ), 1.6 (Max) | °C/W |
| Electrical Characteristics | ||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 (Max) | uA |
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±25V | ±100 (Max) | nA |
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1 (Typ), -1.5 (Max), -2 (Max) | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-20A | 8 (Typ), 12 (Max) | mΩ |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-20A | 11.5 (Typ), 18 (Max) | mΩ |
| Forward Transconductance | gFS | VDS=-5.0V, ID=-20A | 80 (Typ) | S |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=15V | 2890 (Typ), 3500 (Max) | pF |
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=15V | 585 (Typ), 760 (Max) | pF |
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=15V | 470 (Typ), 660 (Max) | pF |
| Gate Resistance | Rg | f=1MHz | 3.8 (Typ), 5.7 (Max) | Ω |
| Total Gate Charge | QG(TOT) | VGS=-10V, VDS=-15V, ID=-20A | 51 (Typ), 61 (Max) | nC |
| Gate-to-Source Charge | QGS | VGS=-10V, VDS=-15V, ID=-20A | 12 (Typ), 14 (Max) | nC |
| Gate-to-Drain Charge | QGD | VGS=-10V, VDS=-15V, ID=-20A | 16 (Typ), 22 (Max) | nC |
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 16 (Typ) | ns |
| Rise Time | tr | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 12 (Typ) | ns |
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 45 (Typ) | ns |
| Fall Time | tf | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 22 (Typ) | ns |
| Forward Voltage | VSD | VGS=0V, IS=-1.0A | -0.7 (Typ), -1.5 (Max) | V |
2504101957_ElecSuper-ESE30P30K_C42420757.pdf
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