SOT23 Package PNP Transistor ElecSuper MMBT3906 with 40V Collector Emitter Voltage and 200mA Current
Key Attributes
Model Number:
MMBT3906
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
MMBT3906
Package:
SOT-23
Product Description
Product Overview
The MMBT3906 is a PNP transistor from ElecSuper, designed as a complementary part to the MMBT3904. It features a Collector-Emitter Voltage (VCBO) of -40V and a continuous Collector Current (IC) of -200mA, with a power dissipation of 200mW. This transistor offers high stability and reliability, making it suitable for various electronic applications. It is packaged in a SOT-23 small outline plastic package.
Product Attributes
- Brand: ElecSuper
- Product Line: SuperTransistor
- Package Type: SOT-23 Small Outline Plastic Package
- Encapsulation: Plastic
- Material: Epoxy UL: 94V-0
- Mounting Position: Any
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified) | ||||||
| Collector-Base Voltage | VCBO | -40 | V | |||
| Collector-Emitter Voltage | VCEO | -40 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current-Continuous | IC | -200 | mA | |||
| Collector Power Dissipation | PC | 200 | mW | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | TSTG | -55 | 150 | |||
| Thermal Resistance (Junction to Ambient) | RJA | 625 | /W | |||
| Electrical Characteristics (At TA = 25 unless otherwise specified) | ||||||
| Collector-base breakdown voltage | V(BR)CBO | IC=-10uA, IE=0 | -40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-1mA, IB=0 | -40 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-10uA, IC=0 | -5 | V | ||
| Collector cut-off current | ICEX | VCE=-30V, VEB(off)=-3V | -100 | nA | ||
| Collector cut-off current | ICBO | VCB=-40V, IE=0 | -50 | nA | ||
| Emitter cut-off current | IEBO | VEB=-5V, IC=0 | -100 | nA | ||
| DC current gain | hFE1 | VCE=-1V, IC=-10mA | 100 | 300 | ||
| DC current gain | hFE2 | VCE=-1V, IC=-50mA | 60 | |||
| DC current gain | hFE3 | VCE=-1V, IC=-100mA | 30 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=-50mA, IB=-5mA | -0.30 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=-50mA, IB=-5mA | -0.95 | V | ||
| Transition frequency | fT | VCE=-20V, IC=-10mA, f=100MHz | 300 | MHz | ||
| Delay time | td | VCC=-3V, VBE(off)=-0.5V, IC=-10mA, IB1=-1mA | 35 | ns | ||
| Rise time | tr | VCC=-3V, VBE(off)=-0.5V, IC=-10mA, IB1=-1mA | 35 | ns | ||
| Storage time | ts | VCC=-3V, IC=-10mA, IB1=IB2=-1mA | 225 | ns | ||
| Fall time | tf | VCC=-3V, IC=-10mA, IB1=IB2=-1mA | 75 | ns | ||
| Classification of hFE | ||||||
| hFE Range | Rank | |||||
| 100~300 | L | |||||
| 100~200 | M | |||||
| 200~300 | H | |||||
Dimensions and Patterns (SOT-23)
| Symbol | Dimensions (mm) | Symbol | Dimensions (mm) | ||
|---|---|---|---|---|---|
| Min. | Max. | Min. | Max. | ||
| A | 0.900 | 1.150 | E1 | 2.250 | 2.550 |
| A1 | 0.900 | 1.050 | e | 0.950 (TYP) | |
| b | 0.300 | 0.500 | e1 | 1.800 | 2.000 |
| c | 0.080 | 0.150 | L | 0.550 (REF) | |
| D | 2.800 | 3.000 | L1 | 0.300 | 0.500 |
| E | 1.200 | 1.400 | 0 | 8 | |
| Additional dimensions: 0.80, 2.02, 1.90, 0.60 | |||||
| Notes: 1. Controlling dimension: in millimeters. 2. General tolerance: 0.05mm. 3. The pad layout is for reference only. 4. Unit: mm. | |||||
2410121717_ElecSuper-MMBT3906_C5249684.pdf
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