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quality Surface Mount Schottky Rectifier DOWO SS13 with Tin Plated Leads and High Forward Surge Capability factory
quality Surface Mount Schottky Rectifier DOWO SS13 with Tin Plated Leads and High Forward Surge Capability factory

Surface Mount Schottky Rectifier DOWO SS13 with Tin Plated Leads and High Forward Surge Capability

Key Attributes
Model Number: SS13
Product Custom Attributes
Reverse Leakage Current (Ir):
500uA@30V
Non-Repetitive Peak Forward Surge Current:
30A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
30V
Voltage - Forward(Vf@If):
550mV@1.0A
Current - Rectified:
1A
Mfr. Part #:
SS13
Package:
SMA
Product Description

Product Overview

This Surface Mount Schottky Rectifier features a low profile package ideal for automated placement. It offers guardring for overvoltage protection, low power losses, high efficiency, and high forward surge capability. The rectifier meets MSL level 1, per J-STD-0020, with a maximum peak of 260 C. It is suitable for low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications.

Product Attributes

  • Brand: DOWOSEMI
  • Origin: China
  • Material: Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant, halogen-free
  • Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102
  • Polarity: Cathode line denotes the cathode end
  • Certifications: MSL level 1, per J-STD-020, LF maximum peak of 260 C

Technical Specifications

ParameterSymbolUnitSS12SS13SS14SS15SS16SS18SS110SS115SS120
Repetitive peak reverse voltageVRRMV203040506080100150200
Average rectified output current @60Hz sine wave, resistance load, TL (FIG.1)IOA1.01.01.01.01.01.01.01.01.0
Surge(non-repetitive)forward current @60Hz half-sine wave,1 cycle, Ta=25IFSMA303030303030303030
Storage temperatureTstg-55 ~+150-55 ~+150-55 ~+150-55 ~+150-55 ~+150-55 ~+150-55 ~+150-55 ~+150-55 ~+150
Junction temperatureTj-55 ~+150-55 ~+150-55 ~+150-55 ~+150-55 ~+150-55 ~+150-55 ~+150-55 ~+150-55 ~+150
Maximum instantaneous forward voltage drop per diodeVFV0.55 (IFM=1.0A)
Maximum DC reverse current at rated DC blocking voltage per diode@ VRM=VRRMIRRMmA0.50 (Ta=25)0.10 (Ta=25)
Maximum DC reverse current at rated DC blocking voltage per diode@ VRM=VRRMIRRMmA10 (Ta=100)
Maximum DC reverse current at rated DC blocking voltage per diode@ VRM=VRRMIRRMmA5.0 (Ta=100)
Thermal resistanceRJ-A/W651)
Thermal resistanceRJ-L/W201)

1)Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas


2410121706_DOWO-SS13_C19189895.pdf

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