P channel enhancement MOSFET ElecSuper ES9435 SuperMOS SOP8 package optimized for power switching and charging circuits
Key Attributes
Model Number:
ES9435
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
RDS(on):
40mΩ@10V;55mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
80pF
Output Capacitance(Coss):
140pF
Input Capacitance(Ciss):
860pF
Pd - Power Dissipation:
3.2W
Gate Charge(Qg):
22.5nC@10V
Mfr. Part #:
ES9435
Package:
SOP-8
Product Description
SuperMOS SOP8 -30V P-channel MOSFET
The ES9435 is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. The device is designed for fast switching and high-density cell performance, ensuring reliability and ruggedness.
Product Attributes
- Brand: ElecSuper
- Product Line: SuperMOS
- Package: SOP8
- Material: Halogen free
- Certifications: UL 94V-0
- Testing: 100% UIS TESTED
- Origin: www.elecsuper.com
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25°C | -5.8 | A | ||
| TA=75°C | -4.5 | A | ||||
| Maximum Power Dissipation | PD | TA=25°C | 3.2 | W | ||
| TA=75°C | 1.9 | W | ||||
| Pulsed Drain Current | IDM | -23.2 | A | |||
| Avalanche Current, Single Pulsed | IAS | a | -9 | A | ||
| Avalanche Energy, Single Pulsed | EAS | a | 12 | mJ | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Junction-to-Ambient Thermal Resistance (t ≤ 10s) | RθJA | 32 | 40 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.0 | -1.5 | -2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-5A | 40 | 60 | mΩ | |
| VGS=-4.5V, ID=-4A | 55 | 80 | mΩ | |||
| Input Capacitance | CISS | VGS=0V, VDS =-15V f=1MHz | 860 | pF | ||
| Output Capacitance | COSS | 140 | pF | |||
| Reverse Transfer Capacitance | CRSS | 80 | pF | |||
| Total Gate Charge | QG(TOT) | VGS=-10V, VDS=-15V, ID =-5A | 22.5 | 29.3 | nC | |
| Gate-to-Source Charge | QGS | 4.8 | nC | |||
| Gate-to-Drain Charge | QGD | 2 | nC | |||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-15V, ID=-2A, RL=12.5Ω, RG=6Ω | 10 | 18 | ns | |
| Rise Time | tr | 10 | 20 | ns | ||
| Turn-Off Delay Time | td(OFF) | 36 | 60 | ns | ||
| Fall Time | tf | 15 | 30 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=-1.0A | -0.7 | -1.5 | V | |
2504101957_ElecSuper-ES9435_C42412242.pdf
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