High Current P Channel MOSFET ElecSuper AOD4185 ES Suitable for Various Power Electronics Circuits
Key Attributes
Model Number:
AOD4185-ES
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
45A
RDS(on):
13mΩ@10V;17mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
180pF
Number:
1 P-Channel
Output Capacitance(Coss):
260pF
Pd - Power Dissipation:
52W
Input Capacitance(Ciss):
2.5nF
Gate Charge(Qg):
42nC@10V
Mfr. Part #:
AOD4185-ES
Package:
TO-252
Product Description
Product Overview
The AOD4185-ES is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This is a standard, Pb-free product.
Product Attributes
- Brand: ElecSuper
- Origin: Not specified
- Material: Halogen free
- Color: Not specified
- Certifications: UL 94V-0
Technical Specifications
| Parameter | Symbol | Limit/Value | Unit | Conditions |
| Drain-Source Voltage | BVDSS | -40 | V | VGS=0V |
| Gate-Source Voltage | VGS | 25 | V | |
| Continuous Drain Current | ID | -45 | A | TC=25C |
| Continuous Drain Current | ID | -34 | A | TC=75C |
| Maximum Power Dissipation | PD | 52 | W | TC=25C |
| Maximum Power Dissipation | PD | 32 | W | TC=75C |
| Pulsed Drain Current | IDM | -180 | A | a |
| Avalanche Current, Single Pulsed | IAS | -33 | A | b |
| Avalanche Energy, Single Pulsed | EAS | 163 | mJ | b |
| Operating Junction Temperature | TJ | 150 | C | |
| Storage Temperature Range | Tstg | -55 to +150 | C | |
| Junction-to-Ambient Thermal Resistance | RJA | 15 / 20 | C/W | t 10 s |
| Junction-to-Case Thermal Resistance | RJC | 2 / 2.4 | C/W | Steady State |
| Drain-to-Source Breakdown Voltage | BVDSS | -40 | V | VGS=0V, ID=-250uA |
| Zero Gate Voltage Drain Current | IDSS | -1 | uA | VGS=0V, VDS=-40V |
| Gate-to-source Leakage Current | IGSS | 100 | nA | VGS=20V, VDS=0V |
| Gate Threshold Voltage | VGS(TH) | -1.0 / -1.6 / -2.0 | V | VGS=VDS, ID=-250uA |
| Drain-to-source On-resistance | RDS(on) | 13 / 16 | m | VGS=-10V, ID=-20A |
| Drain-to-source On-resistance | RDS(on) | 17 / 20 | m | VGS=-4.5V, ID=-15A |
| Input Capacitance | CISS | 2500 | pF | VGS=0V, VDS =-15V, f=1MHz |
| Output Capacitance | COSS | 260 | pF | VGS=0V, VDS =-15V, f=1MHz |
| Reverse Transfer Capacitance | CRSS | 180 | pF | VGS=0V, VDS =-15V, f=1MHz |
| Total Gate Charge | QG(TOT) | 42 | nC | VGS=-10V, VDS=-15V, ID=-20A |
| Gate-to-Source Charge | QGS | 7 | nC | VGS=-10V, VDS=-15V, ID=-20A |
| Gate-to-Drain Charge | QGD | 8.8 | nC | VGS=-10V, VDS=-15V, ID=-20A |
| Turn-On Delay Time | td(ON) | 10 | ns | VGS=-10V, VDS=-15V, RL=1, RG=3 |
| Rise Time | tr | 20 | ns | VGS=-10V, VDS=-15V, RL=1, RG=3 |
| Turn-Off Delay Time | td(OFF) | 55 | ns | VGS=-10V, VDS=-15V, RL=1, RG=3 |
| Fall Time | tf | 30 | ns | VGS=-10V, VDS=-15V, RL=1, RG=3 |
| Forward Voltage | VSD | -0.7 / -1.5 | V | VGS=0V, ISD=-1A |
2504101957_ElecSuper-AOD4185-ES_C21713858.pdf
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