power switch solution ElecSuper AO3400A N Channel MOSFET with avalanche rating and trench technology

Key Attributes
Model Number: AO3400A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
21mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
48pF
Number:
1 N-channel
Output Capacitance(Coss):
62pF
Input Capacitance(Ciss):
550pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
6.7nC@4.5V
Mfr. Part #:
AO3400A
Package:
SOT23-3L
Product Description

Product Overview

The AO3400A is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits, offering high density cell design, reliability, and avalanche rating.

Product Attributes

  • Brand: ElecSuper
  • Material: Halogen free
  • Certifications: UL 94V-0
  • Color: Not specified
  • Origin: Not specified

Technical Specifications

ParameterSymbolConditionsMin.Typ.Max.Unit
Absolute Maximum RatingsBVDSSVGS=0V, ID=250uA30V
VGS±12V
IDTA=25°C5.8A
IDTA=70°C4.6A
PDTA=25°C1.4W
Electrical CharacteristicsRDS(on)VGS=10V, ID=5.8A21.028.0
RDS(on)VGS=4.5V, ID=5.0A25.033.0
VGS(TH)VGS=VDS, ID=250uA0.51.01.3V
CapacitanceCISSVGS=0V, f=1MHz, VDS=10V550pF
COSSVGS=0V, f=1MHz, VDS=10V62pF
CRSSVGS=0V, f=1MHz, VDS=10V48pF
Switching Characteristicstd(ON)VGS=4.5V, VDS=10V, RL=10Ω, RG=6Ω3.8ns
trVGS=4.5V, VDS=10V, RL=10Ω, RG=6Ω13.0ns
td(OFF)VGS=4.5V, VDS=10V, RL=10Ω, RG=6Ω14.2ns
Body Diode CharacteristicsVSDVGS=0V, IS=1.0A0.751.5V

2504101957_ElecSuper-AO3400A_C5224194.pdf

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