P Channel Enhancement Mode Power MOSFET in SOT 23 Package DOWO SI2301 Suitable for Battery Protection
Key Attributes
Model Number:
SI2301
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.8A
RDS(on):
110mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
400mV
Reverse Transfer Capacitance (Crss@Vds):
37pF@10V
Pd - Power Dissipation:
700mW
Input Capacitance(Ciss):
325pF@10V
Gate Charge(Qg):
3.2nC@4.5V
Mfr. Part #:
SI2301
Package:
SOT-23
Product Description
Product Overview
The SI2301 is a P-Channel Enhancement Mode Power MOSFET in a SOT-23 package. It offers high power and current handling capability, making it suitable for applications such as battery protection, load switching, and power management. This product is halogen-free.
Product Attributes
- Brand: Dowosemi
- Product Type: P-Channel Enhancement Mode Power MOSFET
- Package: SOT-23
- Certifications: Halogen free
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250A | 20 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-20V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=8V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | -VGS(th) | VDS=VGS,ID=-250A | 0.4 | 0.7 | 1 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=-4.5V,ID=-2.8A | -- | 78 | 110 | m |
| Drain-Source On-Resistance | RDS(on) | VGS=-2.5V,ID=-2A | -- | 102 | 140 | m |
| Forward Transconductance | gFS | VDS=-5V,ID=-2.8A | -- | 2 | -- | S |
| Input Capacitance | Ciss | VDS=-10V,VGS=0V,f=1MHz | -- | 325 | -- | pF |
| Output Capacitance | Coss | -- | -- | 63 | -- | pF |
| Reverse Transfer Capacitance | Crss | -- | -- | 37 | -- | pF |
| Turn-on Delay Time | td(on) | VDD=-10V, RL=5, VGS=-4.5V,RGEN=3 | -- | 11 | -- | nS |
| Turn-on Rise Time | tr | -- | -- | 5.5 | -- | nS |
| Turn-off Delay Time | td(off) | -- | -- | 22 | -- | nS |
| Turn-off Fall Time | tf | -- | -- | 8 | -- | nS |
| Total Gate Charge | Qg | VDS=-10V,ID=-2A, VGS=-4.5V | -- | 3.2 | -- | nC |
| Gate-Source Charge | Qgs | -- | -- | 0.6 | -- | nC |
| Gate-Drain Charge | Qg d | -- | -- | 0.9 | -- | nC |
| Diode Forward Voltage | -VSD | VGS=0V,IS=-2.8A | -- | -- | 1.2 | V |
| Diode Forward Current | -IS | -- | -- | -- | 2.8 | A |
| Drain-Source Voltage | -VDS | -- | -- | -- | 20 | V |
| Gate-Source Voltage | VGS | -- | -- | 12 | -- | V |
| Drain Current-Continuous | -ID | -- | -- | -- | 2.8 | A |
| Drain Current-Pulsed | -IDM | Note1 | -- | -- | 10 | A |
| Maximum Power Dissipation | PD | -- | -- | -- | 0.7 | W |
| Junction Temperature | TJ | -- | -- | -- | 150 | C |
| Storage Temperature Range | TSTG | -- | -55 | -- | +150 | C |
| Thermal Resistance,Junction-to-Ambient | RJA | Note2 | -- | 179 | -- | C/W |
2410122018_DOWO-SI2301_C3036708.pdf
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