Power MOSFET DOWO AO3400NSA N Channel Enhancement Mode Featuring SOT 23 Package and Low On Resistance
Key Attributes
Model Number:
AO3400NSA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
RDS(on):
28mΩ@10V,5.8A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.4V
Reverse Transfer Capacitance (Crss@Vds):
52pF
Number:
1 N-channel
Input Capacitance(Ciss):
702pF
Output Capacitance(Coss):
66pF
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
9.5nC@4.5V
Mfr. Part #:
AO3400NSA
Package:
SOT-23
Product Description
Product Overview
The AO3400NSA is an N-Channel Enhancement Mode Power MOSFET designed for high power and current handling capabilities. It features a low on-resistance and is suitable for applications such as PWM, load switching, and power management. The device is packaged in a SOT-23 footprint.
Product Attributes
- Brand: Dowosemi
- Part Number: AO3400NSA
- Package: SOT-23
- Origin: China (implied by website www.dowosemi.cn)
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Drain Current-Continuous | ID | 5.8 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 30 | A | ||
| Maximum Power Dissipation | PD | 1.2 | W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | TSTG | -55 | +150 | |||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Ambient | RJA | Note2 | 104 | /W | ||
| Electrical Characteristics (Ta=25 unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=12V,VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | Note3, VDS=VGS,ID=250A | 0.7 | 0.9 | 1.4 | V |
| Drain-source on-resistance | RDS(on) | Note3, VGS=10V, ID=5.8A | 22 | 28 | m | |
| Drain-source on-resistance | RDS(on) | Note3, VGS=4.5V, ID=5A | 25 | 35 | m | |
| Forward Transconductance | gFS | Note3, VDS=5V,ID=1A | 5.5 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V,VGS=0V,f=1MHz | 702 | pF | ||
| Output Capacitance | Coss | 66 | pF | |||
| Reverse Transfer Capacitance | Crss | 52 | pF | |||
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=15V,RL=2.7,VGS=10V,RGEN=3 | 3.3 | nS | ||
| Turn-on Rise Time | tr | 4.8 | nS | |||
| Turn-off Delay Time | td(off) | 26 | nS | |||
| Turn-off Fall Time | tf | 4 | nS | |||
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=15V,ID=5.8A, VGS=4.5V | 9.5 | nC | ||
| Gate-Source Charge | Qgs | 1.5 | nC | |||
| Gate-Drain Charge | Qg d | 3 | nC | |||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3, VGS=0V,IS=5.8A | 1.2 | V | ||
| Diode Forward Current | IS | Note2 | 5.8 | A | ||
2410122022_DOWO-AO3400NSA_C5456620.pdf
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