P Channel MOSFET ElecSuper ESN21307 Offering Low Gate Charge for Power Switch and Charging Circuits
Key Attributes
Model Number:
ESN21307
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
45A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8.5mΩ@10V;12.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
260pF
Number:
1 P-Channel
Output Capacitance(Coss):
335pF
Input Capacitance(Ciss):
1.98nF
Pd - Power Dissipation:
38W
Gate Charge(Qg):
36nC@10V
Mfr. Part #:
ESN21307
Package:
PDFN5x6-8L
Product Description
SuperMOS PDFN5*6-8L -30V P-channel MOSFET
The ESN21307 is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This device is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Material: Halogen free
- Certifications: UL 94V-0
Technical Specifications
| Parameter | Symbol | Limit/Typical Unit | Conditions | Min. | Typ. | Max. |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -30 V | ||||
| Gate-Source Voltage | VGS | ±25 V | ||||
| Continuous Drain Current | ID | -45 A | TC=25°C | |||
| -35 A | TC=75°C | |||||
| Maximum Power Dissipation | PD | 38 W | TC=25°C | |||
| 23 W | TC=75°C | |||||
| Pulsed Drain Current | IDM | -150 A | a | |||
| Avalanche Current, Single Pulsed | IAS | 25 A | b | |||
| Avalanche Energy, Single Pulsed | EAS | 93.7 mJ | b | |||
| Operating Junction Temperature | TJ | 150 °C | ||||
| Storage Temperature Range | Tstg | -55 to +150 °C | ||||
| Junction-to-Ambient Thermal Resistance | RθJA | 25 °C/W | t ≤ 10 s | |||
| Junction-to-Case Thermal Resistance | RθJC | 3.3 °C/W | Steady State | |||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | -30 V | VGS=0V, ID=-250uA | -30 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 µA | VDS=-30V, VGS=0V | |||
| Gate-to-source Leakage Current | IGSS | ±100 nA | VDS=0V, VGS=±25V | |||
| Gate Threshold Voltage | VGS(TH) | -1.0 to -2 V | VGS=VDS, ID=-250uA | -1.0 | -1.5 | -2 |
| Drain-to-source On-resistance | RDS(on) | 8.5 to 12 mΩ | VGS=-10V, ID=-20A | 8.5 | 12 | |
| 12.5 to 18 mΩ | VGS=-4.5V, ID=-20A | 12.5 | 18 | |||
| Forward Transconductance | gFS | 100 S | VDS=-5.0V, ID=-20A | 100 | ||
| Input Capacitance | CISS | 1980 pF | VGS=0V, f=1MHz, VDS =-15V | 1980 | ||
| Output Capacitance | COSS | 335 pF | VGS=0V, f=1MHz, VDS =-15V | 335 | ||
| Reverse Transfer Capacitance | CRSS | 260 pF | VGS=0V, f=1MHz, VDS =-15V | 260 | ||
| Gate Resistance | Rg | 4.5 Ω | f=1MHz | 4.5 | ||
| Total Gate Charge | QG(TOT) | 36 nC | VGS=-10V, VDS=-15V, ID =-20A | 36 | ||
| Gate-to-Source Charge | QGS | 6.0 nC | VGS=-10V, VDS=-15V, ID =-20A | 6.0 | ||
| Gate-to-Drain Charge | QGD | 9.4 nC | VGS=-10V, VDS=-15V, ID =-20A | 9.4 | ||
| Turn-On Delay Time | td(ON) | 12 ns | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 12 | ||
| Rise Time | tr | 7 ns | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 7 | ||
| Turn-Off Delay Time | td(OFF) | 48 ns | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 48 | ||
| Fall Time | tf | 19 ns | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 19 | ||
| Forward Voltage | VSD | -0.85 to -1.5 V | VGS=0V, IS=-20A | -0.85 | -1.5 | |
2504101957_ElecSuper-ESN21307_C5224307.pdf
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