High Current N Channel MOSFET ElecSuper ESNU07R086 Designed for Power Switching and DC DC Conversion
Key Attributes
Model Number:
ESNU07R086
Product Custom Attributes
Drain To Source Voltage:
68V
Current - Continuous Drain(Id):
80A
RDS(on):
6.6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.9V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
230pF
Output Capacitance(Coss):
266pF
Pd - Power Dissipation:
147W
Input Capacitance(Ciss):
4.065nF
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
ESNU07R086
Package:
TO-220
Product Description
Product Overview
The ESNU07R086 is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and Halogen free.
Product Attributes
- Brand: SuperMOS (ElecSuper)
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Limit | Unit | Test Conditions | Typical | Maximum |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 68 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | 80 | A | TC=25℃ | ||
| 52 | A | TC=75℃ | ||||
| Maximum Power Dissipation | PD | 147 | W | |||
| Pulsed Drain Current | IDM | 320 | A | |||
| Avalanche Current, Single Pulsed | IAS | 22 | A | a: Tj=25℃,VDD=35V, VG=10V, L=0.5mH,Rg=25℃. | ||
| Avalanche Energy, Single Pulsed | EAS | 121 | mJ | a: Tj=25℃,VDD=35V, VG=10V, L=0.5mH,Rg=25℃. | ||
| Operating Junction Temperature | TJ | ℃ | 150 | |||
| Lead Temperature | TL | ℃ | 260 | |||
| Storage Temperature Range | Tstg | -55 | to 150 | ℃ | ||
| Single Operation | ||||||
| Junction-to-Case Thermal Resistance | RΘJC | ℃/W | 0.85 | |||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | 68 | V | VGS=0V, ID=250uA | ||
| Zero Gate Voltage Drain Current | IDSS | uA | VDS=68V, VGS=0V | 1 | ||
| Gate-to-source Leakage Current | IGSS | nA | VDS=0V, VGS=±20V | ±100 | ||
| Gate Threshold Voltage | VGS(TH) | V | VGS=VDS, ID=250uA | 2.0 | 4.0 | |
| Drain-to-source On-resistance | RDS(on) | mℓ | VGS=10V, ID=30A | 6.6 | 8.6 | |
| Forward transconductance | gfs | S | VDS=5V, ID=30A | 150 | ||
| Charges, Capacitances and Gate Resistance | ||||||
| Input Capacitance | CISS | pF | VGS=0V, f=1MHz, VDS=25V | 4065 | ||
| Output Capacitance | COSS | pF | VGS=0V, f=1MHz, VDS=25V | 266 | ||
| Reverse Transfer Capacitance | CRSS | pF | VGS=0V, f=1MHz, VDS=25V | 230 | ||
| Total Gate Charge | QG(TOT) | nC | VGS=10V, VDS=30V, ID=20A | 35 | ||
| Gate-to-Source Charge | QGS | nC | VGS=10V, VDS=30V, ID=20A | 11 | ||
| Gate-to-Drain Charge | QGD | nC | VGS=10V, VDS=30V, ID=20A | 9 | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(ON) | ns | VGS=10V, VDS=30V, ID=20A, RG=3ℓ | 15 | ||
| Rise Time | tr | ns | VGS=10V, VDS=30V, ID=20A, RG=3ℓ | 95 | ||
| Turn-Off Delay Time | td(OFF) | ns | VGS=10V, VDS=30V, ID=20A, RG=3ℓ | 48 | ||
| Fall Time | tf | ns | VGS=10V, VDS=30V, ID=20A, RG=3ℓ | 33 | ||
| Body Diode Characteristics | ||||||
| Forward Voltage | VSD | V | VGS=0V, IS=30A | 1.5 | ||
2504101957_ElecSuper-ESNU07R086_C42412313.pdf
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