High reliability surface mount diode EIC 1SS355 silicon epitaxial type suitable for switching circuits
Product Overview
The 1SS355 is a silicon epitaxial high-speed switching diode designed for surface-mounted applications. It offers high reliability with excellent surge current handling capability and is Pb/RoHS Free. Ideal for high-speed switching circuits.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon Epitaxial
- Color: Not specified
- Certifications: Pb / RoHS Free
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Condition |
|---|---|---|---|---|---|---|
| Maximum Ratings and Thermal Characteristics | ||||||
| Maximum Average Forward Current | IF | - | - | 100 | mA | Rating at 25C ambient temperature unless otherwise specified |
| Maximum Peak Forward Current | IFM | - | - | 255 | mA | Rating at 25C ambient temperature unless otherwise specified |
| Maximum Surge Current (1s) | IFSM | - | - | 500 | mA | Rating at 25C ambient temperature unless otherwise specified |
| Junction Temperature | TJ | - | - | 150 | C | Rating at 25C ambient temperature unless otherwise specified |
| Storage Temperature Range | TS | -55 | - | 150 | C | Rating at 25C ambient temperature unless otherwise specified |
| Maximum Peak Reverse Voltage | VRRM | - | - | 90 | V | - |
| Maximum DC Reverse Voltage | VRM | - | - | 80 | V | - |
| Electrical Characteristics | ||||||
| Forward Voltage | VF | - | - | 1.2 | V | IF = 100 mA |
| Reverse Current | IR | - | - | 0.1 | mA | VR = 80 V |
| Capacitance between terminals | CT | - | - | 3.0 | pF | f = 1MHz ; VR = 0.5 V |
| Reverse Recovery Time | Trr | - | - | 4.0 | ns | IF = 10 mA , VR = 6 V |
Mechanical Data
- Case: SOD-323
- Marking Code: "A"
Dimensions in millimeters
Note: Figures 1, 2, 3, and 4 mentioned in the source are graphical representations and not included in the text-based HTML output.
2410010102_EIC-1SS355_C2978796.pdf
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