ElecSuper SI3134KS TP ES MOSFET Featuring Low Gate Charge and High Reliability for DC DC Applications
Key Attributes
Model Number:
SI3134KS-TP-ES
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
1.25A
Operating Temperature -:
-55℃~+150℃
RDS(on):
220mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
750mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Output Capacitance(Coss):
20pF
Input Capacitance(Ciss):
33pF
Pd - Power Dissipation:
710mW
Gate Charge(Qg):
800pC@4.5V
Mfr. Part #:
SI3134KS-TP-ES
Package:
SOT-23
Product Description
Product Overview
The SI3134KS-TP-ES is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and Halogen-free.
Product Attributes
- Brand: ElecSuper
- Model: SI3134KS-TP-ES
- Material: Halogen free
- Certifications: UL 94V-0
- Packaging: Tape & Reel (7 inches, 3,000 PCS per reel)
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| ABSOLUTE MAXIMUM RATINGS & THERMAL CHARACTERISTICS | ||||||
| Drain-Source Voltage | BVDSS | 20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | TA=25°C | 1.25 | A | ||
| TA=75°C | 0.97 | A | ||||
| Maximum Power Dissipation | PD | 0.71 | W | |||
| Pulsed Drain Current | IDM | 5 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | t ≤10s | 176 | °C/W | ||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±10V | ±10 | uA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 0.35 | 0.75 | 1.1 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=0.9A | 220 | 300 | mΩ | |
| VGS=2.5V, ID=0.45A | 290 | 400 | mΩ | |||
| VGS=1.8V, ID=0.2A | 420 | 700 | mΩ | |||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=10V | 33 | pF | ||
| Output Capacitance | COSS | 20 | pF | |||
| Reverse Transfer Capacitance | CRSS | 10 | pF | |||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=10V, ID=0.5A | 0.8 | nC | ||
| Gate-to-Source Charge | QGS | 0.3 | ||||
| Gate-to-Drain Charge | QGD | 0.15 | ||||
| Turn-On Delay Time | td(ON) | VGS=4.5V, VDS=10V, ID=0.5A, RG=3Ω | 4 | ns | ||
| Rise Time | tr | 18.8 | ||||
| Turn-Off Delay Time | td(OFF) | 10 | ||||
| Fall Time | tf | 23 | ||||
| Forward Voltage | VSD | VGS=0V, IS=0.9A | 1.5 | V | ||
2504101957_ElecSuper-SI3134KS-TP-ES_C7527990.pdf
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