High density cell design ElecSuper AO3400 MOSFET suitable for power management and DC DC converters
Key Attributes
Model Number:
AO3400
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
21mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
48pF
Number:
1 N-channel
Output Capacitance(Coss):
62pF
Input Capacitance(Ciss):
550pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
6.7nC@4.5V
Mfr. Part #:
AO3400
Package:
SOT-23
Product Description
Product Overview
The AO3400 is an N-Channel enhancement MOS Field Effect Transistor from ElecSuper, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits, offering high density cell design and a reliable, rugged construction. This product is halogen-free and Pb-free.
Product Attributes
- Brand: ElecSuper
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit | |
|---|---|---|---|---|---|---|---|
| OFF CHARACTERISTICS | |||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | |||
| Zero Gate Voltage Drain Current | IDSS | VDS=24V, VGS=0V | 1 | uA | |||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=12V | 100 | nA | |||
| ON CHARACTERISTICS | |||||||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 0.6 | 1.0 | 1.3 | V | |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=5.8A | 21.0 | 28.0 | m | ||
| VGS=4.5V, ID=5.0A | 25.0 | 33.0 | m | ||||
| VGS=2.5V, ID=3.0A | 33.0 | 51.0 | m | ||||
| Forward Transconductance | gFS | VDS=5.0V, ID=5.8A | 7.8 | 15 | S | ||
| CHARGES, CAPACITANCES AND GATE RESISTANCE | |||||||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=10V | 550 | pF | |||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=10V | 62 | pF | |||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=10V | 48 | pF | |||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=10V, ID=5.8A | 6.7 | nC | |||
| Threshold Gate Charge | QG(TH) | VGS=4.5V, VDS=10V, ID=5.8A | 0.75 | nC | |||
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=10V, ID=5.8A | 1.65 | nC | |||
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=10V, ID=5.8A | 1.78 | nC | |||
| SWITCHING CHARACTERISTICS | |||||||
| Turn-On Delay Time | td(ON) | VGS=4.5V, VDS=10V, RL=10, RG=6 | 3.8 | ns | |||
| Rise Time | tr | VGS=4.5V, VDS=10V, RL=10, RG=6 | 13.0 | ns | |||
| Turn-Off Delay Time | td(OFF) | VGS=4.5V, VDS=10V, RL=10, RG=6 | 14.2 | ns | |||
| Fall Time | tf | VGS=4.5V, VDS=10V, RL=10, RG=6 | 2.0 | ns | |||
| BODY DIODE CHARACTERISTICS | |||||||
| Forward Voltage | VSD | VGS=0V, IS=1.0A | 0.75 | 1.5 | V | ||
| Absolute Maximum Rating & Thermal Characteristics | |||||||
| Drain-Source Voltage | BVDSS | 30 | V | ||||
| Gate-Source Voltage | VGS | 12 | V | ||||
| Continuous Drain Current | ID | TA=25C | 5.8 | A | |||
| TA=70C | 4.6 | A | |||||
| Maximum Power Dissipation | PD | TA=25C | 1.4 | W | |||
| TA=70C | 0.9 | W | |||||
| Pulsed Drain Current | IDM | 30 | A | ||||
| Operating Junction Temperature | TJ | 150 | C | ||||
| Lead Temperature | TL | 260 | C | ||||
| Storage Temperature Range | Tstg | -55 | 150 | C | |||
| Junction-to-Ambient Thermal Resistance | RJA | t 10 s | 75 | 90 | C/W | ||
| Junction-to-Case Thermal Resistance | RJC | Steady State | 43 | 70 | C/W | ||
2504101957_ElecSuper-AO3400_C5224189.pdf
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