Power Switching MOSFET ElecSuper 2N7002WT1G ES with Low Gate Leakage and Enhanced Trench Technology
Product Overview
The 2N7002WT1G-ES is an N-Channel enhancement mode MOS Field Effect Transistor utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and made with Halogen-free material.
Product Attributes
- Brand: SuperMOS
- Origin: ElecSuper Incorporated
- Material: Halogen free
- Certifications: UL 94V-0
- Flammability Rating: UL 94V-0
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=20V | 10 | uA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.6 | 2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=0.3A | 1.85 | 2.2 | ||
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=0.2A | 2.05 | 3.0 | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | 28 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=25V | 11 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=25V | 4 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=10V, ID=0.3A | 1.8 | nC | ||
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=10V, ID=0.3A | 0.3 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=10V, ID=0.3A | 0.6 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=10V, ID=0.2A, RG=10 | 2 | ns | ||
| Rise Time | tr | VGS=10V, VDS=10V, ID=0.2A, RG=10 | 15 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=10V, ID=0.2A, RG=10 | 7 | ns | ||
| Fall Time | tf | VGS=10V, VDS=10V, ID=0.2A, RG=10 | 20 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=0.3A | 1.5 | V |
2504101957_ElecSuper-2N7002WT1G-ES_C5224239.pdf
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