Power Switching Device ElecSuper AO3416 N Channel MOSFET with Low On Resistance and Gate Charge
Key Attributes
Model Number:
AO3416
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
7.5A
RDS(on):
13mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
88pF
Number:
1 N-channel
Output Capacitance(Coss):
160pF
Input Capacitance(Ciss):
1.3nF
Pd - Power Dissipation:
1.39W
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
AO3416
Package:
SOT-23
Product Description
Product Overview
The AO3416 is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent on-resistance (RDS(ON)) and low gate charge. It is designed for applications such as DC-DC conversion, power switching, and charging circuits, offering a high-density cell design for improved performance. This product is Pb-free and Halogen-free.
Product Attributes
- Brand: ElecSuper
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 20 | V | ||
| VGS=0V, ID=250uA | 20 | V | ||||
| Gate-Source Voltage | VGS | ±10 | V | |||
| Continuous Drain Current | ID | TA=25℃ | 7.5 | A | ||
| TA=75℃ | 5.8 | A | ||||
| Maximum Power Dissipation | PD | TA=25℃ | 1.39 | W | ||
| TA=75℃ | 0.83 | |||||
| Pulsed Drain Current | IDM | 30 | A | |||
| Operating Junction Temperature | TJ | 150 | ℃ | |||
| Lead Temperature | TL | 260 | ℃ | |||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | ||
| Junction-to-Ambient Thermal Resistance | RΘJA | Single Operation | 70 | 90 | ℃/W | |
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 0.5 | 0.7 | 0.9 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=6.5A | 13 | 17 | mΩ | |
| VGS=2.5V, ID=5.5A | 16 | 23 | ||||
| Forward transconductance | gfs | VDS=5V, ID=6.5A | 40 | S | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=10V | 1300 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=10V | 160 | |||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=10V | 88 | |||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=10V, ID=7.5A | 10 | nC | ||
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=10V, ID=7.5A | 4.5 | |||
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=10V, ID=7.5A | 2.5 | |||
| Turn-On Delay Time | td(ON) | VGS=4.5V, VDS=10V, RL=1.5Ω, RG=3Ω | 280 | ns | ||
| Rise Time | tr | VGS=4.5V, VDS=10V, RL=1.5Ω, RG=3Ω | 330 | |||
| Turn-Off Delay Time | td(OFF) | VGS=4.5V, VDS=10V, RL=1.5Ω, RG=3Ω | 2.5 | |||
| Fall Time | tf | VGS=4.5V, VDS=10V, RL=1.5Ω, RG=3Ω | ||||
| Forward Voltage | VSD | VGS=0V, IS=6.5A | 1.5 | V |
2504101957_ElecSuper-AO3416_C5350993.pdf
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