NPN Transistor ElecSuper S9013 with 40V Collector Base Voltage and 500mA Collector Current in SOT 23 Package
Key Attributes
Model Number:
S9013
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
150MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-
Mfr. Part #:
S9013
Package:
SOT-23
Product Description
Product Overview
The S9013 is an NPN transistor from ElecSuper, designed with a VCBO of 40V and an IC of 500mA. Encased in a SOT-23 plastic package, this transistor offers high stability and reliability, making it a complementary option to the S9012. It is suitable for applications requiring a power dissipation of 300mW.
Product Attributes
- Brand: ElecSuper
- Model Series: SuperTransistor
- Package Type: SOT-23 Plastic-Encapsulate
- Transistor Type: NPN
- Material: Epoxy UL: 94V-0
- Mounting Position: Any
Technical Specifications
| Parameters | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Absolute Maximum Rating & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified) | ||||
| Collector-Base Voltage | VCBO | 40 | V | |
| Collector-Emitter Voltage | VCEO | 25 | V | |
| Emitter-Base Voltage | VEBO | 5 | V | |
| Collector Current-Continuous | IC | 500 | mA | |
| Collector Power Dissipation | PC | 300 | mW | |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature | TSTG | -55~150 | ||
| Thermal resistance From junction to ambient | RJA | 416 | /W | |
| Electrical Characteristics (At TA = 25 unless otherwise specified) | ||||
| Collector-base breakdown voltage | V(BR)CBO | 40 | V | IC=100uA, IE=0 |
| Collector-emitter breakdown voltage | V(BR)CEO | 25 | V | IC=1mA, IB=0 |
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE=100uA, IC=0 |
| Collector cut-off current | ICEO | 100 | nA | VCE=20V, IB=0 |
| ICBO | 100 | nA | VCB=40V, IE=0 | |
| Emitter cut-off current | IEBO | 100 | nA | VEB=5V, IC=0 |
| DC current gain | hFE1 | 120 | VCE=1V, IC=50mA | |
| hFE1 | 400 | VCE=1V, IC=50mA | ||
| hFE2 | 40 | VCE=1V, IC=500mA | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.60 | V | IC=500mA, IB=50mA |
| Base -emitter saturation voltage | VBE(sat) | 1.20 | V | IC=500mA, IB=50mA |
| Base -emitter voltage | VBE | 0.70 | V | VCB=1V, IC=10mA |
| Transition frequency | fT | 150 | MHz | VCE=6V, IC=20mA, f=30MHz |
| Collector output capacitance | COB | 8 | pF | VCB=6V, IE=0, f=1MHz |
| Classification of hFE | ||||
| Rank | Range | |||
| L | 120~200 | |||
| H | 200~350 | |||
| J | 300~400 | |||
| Dimension and Patterns (SOT-23) | ||||
| Symbol | Dimensions (mm) | Min. | Max. | |
| A | 0.900 | 1.150 | ||
| A1 | 0.900 | 1.050 | ||
| b | 0.300 | 0.500 | ||
| c | 0.080 | 0.150 | ||
| D | 2.800 | 3.00 | ||
| E | 1.200 | 1.400 | ||
| E1 | 2.250 | 2.550 | ||
| e | (TYP) | 0.950 | ||
| e1 | 1.800 | 2.000 | ||
| L | (REF) | 0.550 | ||
| L1 | 0.300 | 0.500 | ||
| 0 | 8 | |||
Note: 1. Controlling dimension: in millimeters. 2. General tolerance: 0.05mm. 3. The pad layout is for reference only. 4. Unit: mm.
2410121717_ElecSuper-S9013_C5249679.pdf
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