Low Gate Charge and RDS ON N Channel MOSFET ElecSuper ESJL3134KAE for Power Conversion Applications
Product Overview
The ESJL3134KAE is an N-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuits. This standard product is Pb-free and Halogen-free.
Product Attributes
- Brand: ElecSuper
- Model: ESJL3134KAE
- Package: SOT-523
- Marking: 34KW
- Material: Halogen free
- Certifications: UL 94V-0
- Reel Size: 7 inches
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=10V | 10 | uA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 0.4 | 0.65 | 1.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=0.5A | 150 | 165 | m | |
| VGS=2.5V, ID=0.3A | 200 | 300 | ||||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=10V | 60 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=10V | 22 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=10V | 12 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=10V, ID=0.9A | 1 | nC | ||
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=10V, ID=0.9A | 0.28 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=10V, ID=0.9A | 0.22 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=4.5V, VDS=10V, ID=0.5A, RG=10 | 2 | ns | ||
| Rise Time | tr | VGS=4.5V, VDS=10V, ID=0.5A, RG=10 | 20 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=4.5V, VDS=10V, ID=0.5A, RG=10 | 10 | ns | ||
| Fall Time | tf | VGS=4.5V, VDS=10V, ID=0.5A, RG=10 | 23 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=0.9A | 1.5 | V |
2504101957_ElecSuper-ESJL3134KAE_C42420845.pdf
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