Silicon Epitaxial Planar Diode EIC LL4148PF High Speed Switching Suitable for Signal Processing

Key Attributes
Model Number: LL4148PF
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA
Non-Repetitive Peak Forward Surge Current:
4A
Reverse Recovery Time (trr):
4ns
Voltage - DC Reverse (Vr) (Max):
75V
Pd - Power Dissipation:
500mW
Voltage - Forward(Vf@If):
1V@10mA
Current - Rectified:
150mA
Mfr. Part #:
LL4148PF
Package:
LL-34
Product Description

LL4148 HIGH SPEED SWITCHING DIODE

The LL4148 is a high-speed switching diode designed for general-purpose applications. It features silicon epitaxial planar construction for high reliability, low reverse current, and a low forward voltage drop. Its fast switching speed makes it suitable for various electronic circuits requiring efficient signal processing.

Product Attributes

  • Brand: eicsemi
  • Material: Silicon Epitaxial Planar
  • Certifications: Pb / RoHS Free

Technical Specifications

ParameterSymbolValueUnitTest Condition
Maximum Peak Reverse VoltageVRM100V
Maximum Reverse VoltageVR75V
Maximum Continuous CurrentIF200mA
Maximum Average Forward Current (Half Wave Rectification with Resistive Load, f 50Hz)IF(AV)150mA
Maximum Surge Forward Current (at t = 1 S)IFSM4A
Maximum Surge Forward Current (at t = 1 mS)IFSM0.098A
Maximum Surge Forward Current (at t = 1 S)IFSM0.001A
Maximum Power DissipationPD500mWRating at 25 C ambient temperature unless otherwise specified.
Thermal Resistance Junction to tie-pointRJtp300C/W
Maximum Junction TemperatureTJ175C
Storage Temperature RangeTS-65 to 175C
Reverse CurrentIR25nAVR = 20 V
Reverse CurrentIR5AVR = 75 V
Reverse CurrentIR50AVR = 20 V , Tj = 150 C
Forward VoltageVF1VIF = 10 mA
Diode CapacitanceCd4pFf = 1MHz ; VR = 0
Reverse Recovery TimeTrr0.5nsIF = 10 mA , IR = 1mA, VR = 6 V, RL = 100

2504101957_EIC-LL4148PF_C3015243.pdf

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