High Current Silicon Rectifier Diode EIC BY255 Low Forward Voltage Drop Pb RoHS Free DO201AD Package
Product Overview
The BY251-BY255 series are silicon rectifier diodes designed for high current and surge current applications. They offer high reliability, low reverse current, and low forward voltage drop, making them suitable for various power supply and rectification circuits. These diodes are Pb/RoHS free and housed in a DO-201AD molded plastic case.
Product Attributes
- Brand: EICSEMI (implied by website)
- Material: Silicon
- Certifications: UL94V-O rate flame retardant, Pb / RoHS Free
- Case: DO-201AD Molded plastic
- Lead: Axial lead solderable per MIL-STD-202, Method 208
- Polarity: Color band denotes cathode end
- Mounting Position: Any
Technical Specifications
| Symbol | BY251 | BY252 | BY253 | BY254 | BY255 | Unit | Notes |
| Maximum Repetitive Peak Reverse Voltage (VRRM) | 200 | 400 | 600 | 800 | 1300 | V | |
| Maximum RMS Voltage (VRMS) | 140 | 280 | 420 | 560 | 910 | V | |
| Maximum DC Blocking Voltage (VDC) | 200 | 400 | 600 | 800 | 1300 | V | |
| Maximum Average Forward Current (IF) | 3.0 | A | Ta = 50 C, 0.375"(9.5mm) Lead Length | ||||
| Peak Forward Surge Current (IFSM) | 100 | A | 8.3ms Single half sine wave | ||||
| Maximum Forward Voltage (VF) | 1.1 | V | at IF = 3.0 Amps | ||||
| Maximum DC Reverse Current (IR) | 20 | A | Ta = 25 C at rated DC Blocking Voltage | ||||
| Maximum DC Reverse Current (IR(H)) | 50 | A | Ta = 100 C at rated DC Blocking Voltage | ||||
| Typical Junction Capacitance (CJ) | 50 | pF | (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC | ||||
| Typical Thermal Resistance (RJA) | 18 | C/W | (2) Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted. | ||||
| Junction Temperature Range (TJ) | -65 to +175 | C | |||||
| Storage Temperature Range (TSTG) | -65 to +175 | C | |||||
| Weight | 0.929 | grams | |||||
2410121931_EIC-BY255_C2978876.pdf
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