Low Gate Charge N Channel MOSFET ElecSuper ESE6050KA Suitable for Power Dissipation up to 27 8 Watts
Key Attributes
Model Number:
ESE6050KA
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
30A
RDS(on):
14mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Output Capacitance(Coss):
230pF
Input Capacitance(Ciss):
930pF
Pd - Power Dissipation:
27.8W
Gate Charge(Qg):
22nC@10V
Mfr. Part #:
ESE6050KA
Package:
TO-252
Product Description
Product Overview
The ESE6050KA is an N-Channel enhancement MOS Field Effect Transistor from ElecSuper, utilizing advanced shielded gate trench technology for excellent RDS(ON) and low gate charge. It is designed for applications such as DC-DC conversion, power switches, and charging circuits, offering high density cell design, a reliable and rugged construction, avalanche rating, and low leakage current. This product is Pb-free and Halogen-free.
Product Attributes
- Brand: ElecSuper
- Model: ESE6050KA
- Package: TO-252
- Material: Halogen free
- Flammability Rating: UL 94V-0
- Certifications: Pb- free
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25C | 30 | A | ||
| Continuous Drain Current | ID | TC=100C | 20 | A | ||
| Maximum Power Dissipation | PD | 27.8 | W | |||
| Pulsed Drain Current | IDM | 120 | A | |||
| Avalanche Current, Single Pulsed | IAS | a | 16.5 | A | ||
| Avalanche Energy, Single Pulsed | EAS | a | 68 | mJ | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Thermal Characteristics | ||||||
| Junction-to-Case Thermal Resistance | RθJC | Single Operation | 4.5 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1 | µA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.6 | 2.5 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=20A | 14 | 18 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=10A | 18 | 25 | mΩ | |
| Forward transconductance | gfs | VDS=5V, ID=20A | 100 | S | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | 930 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=25V | 230 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=25V | pF | |||
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=30V, ID=20A | 22 | nC | ||
| Gate-to-Source Charge | QGS | VGS=10V, VDS=30V, ID=20A | 4.5 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=10V, VDS=30V, ID=20A | 3.5 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=30V, ID=20A, RG=1.6Ω | 4.5 | ns | ||
| Rise Time | tr | VGS=10V, VDS=30V, ID=20A, RG=1.6Ω | 3 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=30V, ID=20A, RG=1.6Ω | 14 | ns | ||
| Fall Time | tf | VGS=10V, VDS=30V, ID=20A, RG=1.6Ω | 2.7 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=20A | 1.5 | V | ||
2504101957_ElecSuper-ESE6050KA_C42412311.pdf
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