P channel MOSFET ElecSuper ESB409L featuring low gate charge and trench technology for DC DC converter
Key Attributes
Model Number:
ESB409L
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
33A
RDS(on):
27mΩ@10V;31mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
160pF
Number:
1 P-Channel
Output Capacitance(Coss):
180pF
Pd - Power Dissipation:
69W
Input Capacitance(Ciss):
3.02nF
Gate Charge(Qg):
46.6nC@10V
Mfr. Part #:
ESB409L
Package:
TO-263
Product Description
Product Overview
The ESB409L is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This product is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Origin: Incorporated
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Limit | Unit | Test Conditions |
| Absolute Maximum Ratings & Thermal Characteristics | ||||
| Drain-Source Voltage | BVDSS | -60 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | -33 | A | TC=25°C |
| Continuous Drain Current | ID | -26 | A | TC=75°C |
| Maximum Power Dissipation | PD | 69 | W | TC=25°C |
| Maximum Power Dissipation | PD | 42 | W | TC=75°C |
| Pulsed Drain Current | IDM | -132 | A | |
| Avalanche current single pulse | IAS | -29 | A | RG=25Ω, VDD=-60V, VGS=-10V, L=0.3mH, TJ=25°C |
| Avalanche energy single pulse | EAS | 136 | mJ | RG=25Ω, VDD=-60V, VGS=-10V, L=0.3mH, TJ=25°C |
| Operating Junction Temperature | TJ | 150 | °C | |
| Storage Temperature Range | Tstg | -55 to +150 | °C | |
| Single Operation | ||||
| Junction-to-Case Thermal Resistance (t≤10s) | RθJC | 1.5 | °C/W | Typical |
| Junction-to-Case Thermal Resistance (t≤10s) | RθJC | 1.8 | °C/W | Maximum |
| Electrical Characteristics (At TA = 25°C unless otherwise specified) | ||||
| OFF CHARACTERISTICS | ||||
| Drain-to-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V, ID=-250uA |
| Zero Gate Voltage Drain Current | IDSS | -1 | uA | VDS=-60V, VGS=0V |
| Gate-to-source Leakage Current | IGSS | ±100 | nA | VDS=0V, VGS=±20V |
| ON CHARACTERISTICS | ||||
| Gate Threshold Voltage | VGS(TH) | -1.1 | V | VGS=VDS, ID=-250uA |
| Gate Threshold Voltage | VGS(TH) | -1.6 | V | VGS=VDS, ID=-250uA |
| Gate Threshold Voltage | VGS(TH) | -2.1 | V | VGS=VDS, ID=-250uA |
| Drain-to-source On-resistance | RDS(on) | 27 | mΩ | VGS=-10V, ID=-20A |
| Drain-to-source On-resistance | RDS(on) | 34 | mΩ | VGS=-10V, ID=-20A |
| Drain-to-source On-resistance | RDS(on) | 31 | mΩ | VGS=-4.5V, ID=-20A |
| Drain-to-source On-resistance | RDS(on) | 38 | mΩ | VGS=-4.5V, ID=-20A |
| Forward Transconductance | gFS | 60 | S | VDS=-5V, ID=-20A |
| CHARGES, CAPACITANCES AND GATE RESISTANCE | ||||
| Input Capacitance | CISS | 3020 | pF | VGS=0V VDS =-20V f=1MHz |
| Output Capacitance | COSS | 180 | pF | VGS=0V VDS =-20V f=1MHz |
| Reverse Transfer Capacitance | CRSS | 160 | pF | VGS=0V VDS =-20V f=1MHz |
| Total Gate Charge | QG(TOT) | 46.6 | nC | VGS=-10V VDS=-20V ID =-10A |
| Gate-to-Source Charge | QGS | 9.1 | nC | VGS=-10V VDS=-20V ID =-10A |
| Gate-to-Drain Charge | QGD | 6.2 | nC | VGS=-10V VDS=-20V ID =-10A |
| SWITCHING CHARACTERISTICS | ||||
| Turn-On Delay Time | td(ON) | 45 | ns | VGS=-10V, VDS=-15V, ID=-1A, RG=3Ω |
| Rise Time | tr | 28 | ns | VGS=-10V, VDS=-15V, ID=-1A, RG=3Ω |
| Turn-Off Delay Time | td(OFF) | 80 | ns | VGS=-10V, VDS=-15V, ID=-1A, RG=3Ω |
| Fall Time | tf | 6.6 | ns | VGS=-10V, VDS=-15V, ID=-1A, RG=3Ω |
| BODY DIODE CHARACTERISTICS | ||||
| Forward Voltage | VSD | -1.5 | V | VGS=0V, IS=-1.0A |
2504101957_ElecSuper-ESB409L_C5350981.pdf
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