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quality Switching Transistor ElecSuper MMBT2222A SOT23 Package with 300mW Power Dissipation and High Stability factory
quality Switching Transistor ElecSuper MMBT2222A SOT23 Package with 300mW Power Dissipation and High Stability factory

Switching Transistor ElecSuper MMBT2222A SOT23 Package with 300mW Power Dissipation and High Stability

Key Attributes
Model Number: MMBT2222A
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
10nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
MMBT2222A
Package:
SOT-23
Product Description

Product Overview

The MMBT2222A is a SOT-23 plastic-encapsulated switching transistor designed for high stability and reliability. It offers a Collector-Base Voltage (VCBO) of 75V and a continuous Collector Current (IC) of 600mA, with a power dissipation of 300mW. This complementary transistor to the MMBT2907A is suitable for various electronic applications requiring efficient switching capabilities.

Product Attributes

  • Brand: ElecSuper
  • Package Type: SOT-23 Small Outline Plastic Package
  • Material: Plastic-Encapsulate
  • Flammability Rating: Epoxy UL: 94V-0
  • Mounting Position: Any

Technical Specifications

Parameter Symbol Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified)
Collector-Base Voltage VCBO 75 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6 V
Collector Current-Continuous IC 600 mA
Collector Power Dissipation PC 300 mW
Junction Temperature Tj 150
Storage Temperature TSTG -55 ~ 150
Thermal Resistance Junction to Ambient RJA 417 /W
Electrical Characteristics (At TA = 25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC=10uA, IE=0 75 V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE=10uA, IC=0 6 V
Collector cut-off current ICEX VCE=30V, VEB(off)=3V 10 nA
Collector cut-off current ICBO VCB=60V, IE=0 10 nA
Emitter cut-off current IEBO VEB=3V, IC=0 100 nA
DC current gain hFE1 VCE=10V, IC=0.1mA 40
DC current gain hFE2 VCE=10V, IC=150mA 100 300
DC current gain hFE3 VCE=10V, IC=500mA 42
Collector-emitter saturation voltage VCE(sat)* IC=150mA, IB=15mA 0.30 V
Collector-emitter saturation voltage VCE(sat)* IC=500mA, IB=50mA 1.00 V
Base-emitter saturation voltage VBE(sat)* IC=150mA, IB=15mA 1.20 V
Base-emitter saturation voltage VBE(sat)* IC=500mA, IB=50mA 2.00 V
Transition frequency fT VCE=20V, IC=20mA, f=100MHz 300 MHz
Delay time td VCC=30V, VBE(off)=-0.5V, IC=150mA, IB1=15mA 10 ns
Rise time tr 25 ns
Storage time ts VCC=30V, IC=150mA, IB1=IB2=15mA 225 ns
Fall time tf 60 ns
*Pulse test: pulse width300us duty cycle2.0%
Classification of hFE
Rank hFE Range
L hFE(1) 100~200
H hFE(1) 200~300

Dimensions and Patterns (SOT-23)

Symbol Dimensions (mm) Symbol Dimensions (mm)
Min. Max. Min. Max.
A 0.900 1.150 E1 2.250 2.550
A1 0.900 1.050 e 0.950 (TYP)
b 0.300 0.500 e1 1.800 2.000
c 0.080 0.150 L 0.550 (REF)
D 2.800 3.000 L1 0.300 0.500
E 1.200 1.400 0 8
Note: 1. Controlling dimension: in millimeters 2. General tolerance: 0.05mm 3. The pad layout is for reference only 4. Unit: mm

2410121917_ElecSuper-MMBT2222A_C5249681.pdf

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