ElecSuper BSS138DW 7 F ES N Channel MOSFET Featuring Trench Technology and High Density Cell Design
Key Attributes
Model Number:
BSS138DW-7-F-ES
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
410mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.5Ω@10V;1.6Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.2pF
Number:
2 N-Channel
Output Capacitance(Coss):
9.7pF
Input Capacitance(Ciss):
25pF
Pd - Power Dissipation:
417mW
Gate Charge(Qg):
650pC@4.5V
Mfr. Part #:
BSS138DW-7-F-ES
Package:
SOT-363
Product Description
Product Overview
The BSS138DW-7-F-ES is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits, offering high density cell design, a reliable and rugged construction, and avalanche rating. This standard product is Pb-free and Halogen free.
Product Attributes
- Brand: SuperMOS (ElecSuper)
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | BVDSS | VGS=0V, ID=10mA | 60 | V | ||
| VGS | ±20 | V | ||||
| ID | 0.41 | A | ||||
| PD | 417 | mW | ||||
| IDM | a | 1.64 | A | |||
| Electrical Characteristics | BVDSS | VGS=0V, ID=10mA | 60 | V | ||
| IDSS | VDS=60V, VGS=0V,TJ=25 | 1.0 | uA | |||
| IGSS | VDS=0V, VGS=±20V | ±10 | uA | |||
| ON CHARACTERISTICS | VGS(TH) | VGS=VDS, ID=250uA | 0.8 | 1.0 | 1.5 | V |
| RDS(on) | VGS=10V, ID=0.5A | 1.5 | 2.0 | Ω | ||
| RDS(on) | VGS=4.5V, ID=0.2A | 1.6 | 2.5 | Ω | ||
| CHARGES, CAPACITANCES AND GATE RESISTANCE | CISS | VGS=0V, f=1MHz, VDS =25V | 25 | 50 | pF | |
| COSS | 9.7 | 22 | pF | |||
| CRSS | 2.2 | 5 | pF | |||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=25V, ID=0.25A | 0.65 | 1 | nC | |
| QGS | 0.2 | |||||
| QGD | 0.23 | |||||
| SWITCHING CHARACTERISTICS | td(ON) | VGS=10V, VDS=25V, ID=0.5A, RG=6Ω | 2.3 | 5 | ns | |
| tr | 19.2 | 40 | ns | |||
| td(OFF) | 6.3 | 12 | ns | |||
| tf | 23 | 50 | ns | |||
| BODY DIODE CHARACTERISTICS | VSD | VGS=0V, IS=0.5A | 0.86 | 1.5 | V |
2504101957_ElecSuper-BSS138DW-7-F-ES_C5224288.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
