High density cell structure ElecSuper AO4435 MOSFET optimized for low RDS ON and avalanche rated performance
Key Attributes
Model Number:
AO4435
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
13.5mΩ@10V;18.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
145pF
Number:
1 P-Channel
Output Capacitance(Coss):
160pF
Input Capacitance(Ciss):
1.23nF
Pd - Power Dissipation:
-
Gate Charge(Qg):
26.4nC@10V
Mfr. Part #:
AO4435
Package:
SOP8
Product Description
Product Overview
The AO4435 is a P-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This device is Pb-free and Halogen-free, designed for high density cell structure for low RDS(on), fast switching, and is avalanche rated.
Product Attributes
- Brand: ElecSuper
- Part Number: AO4435
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-30V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VGS=25V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.0 | -1.5 | -2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-10A | 13.5 | 21 | m | |
| VGS=-4.5V, ID=-7A | ||||||
| Input Capacitance | CISS | VGS=0V VDS =-15V f=1MHz | 1230 | pF | ||
| Output Capacitance | COSS | 160 | pF | |||
| Reverse Transfer Capacitance | CRSS | 145 | pF | |||
| Gate Resistance | Rg | f=1MHZ | 10 | |||
| Total Gate Charge | QG(TOT) | VGS=-10V VDS=-15V ID =-10A | 26.4 | nC | ||
| Gate-to-Source Charge | QGS | 6 | ||||
| Gate-to-Drain Charge | QGD | 4.3 | ||||
| Turn-On Delay Time | td(ON) | VGS=-10V VDS=-15V RL=1 RG=3 | 18 | ns | ||
| Rise Time | tr | 22 | ||||
| Turn-Off Delay Time | td(OFF) | 55 | ns | |||
| Fall Time | tf | 42 | ||||
| Forward Voltage | VSD | VGS=0V, ISD=-1.0A | -0.75 | -1 | V | |
| Continuous Drain Current | ID | TA=25C | -10.5 | A | ||
| Continuous Drain Current | ID | TA=70C | -8.0 | A | ||
| Maximum Power Dissipation | PD | TA=25C | 3.1 | W | ||
| Maximum Power Dissipation | PD | TA=70C | 2.0 | |||
| Pulsed Drain Current | IDM | -80 | A | |||
| Avalanche Current, Single Pulsed | IAS | a: Tj=25,VDD=-30V,VG=-10V,L=0.3mH,Rg=25. | -18.5 | A | ||
| Avalanche Energy, Single Pulsed | EAS | a: Tj=25,VDD=-30V,VG=-10V,L=0.3mH,Rg=25. | 51 | mJ | ||
| Operating Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | Tstg | -55 | +150 | C | ||
| Junction-to-Ambient Thermal Resistance | RJA | 32 | 40 | C/W | ||
| Junction-to-Lead Thermal Resistance | RJL | 3.2 | 4 |
2504101957_ElecSuper-AO4435_C5224296.pdf
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