N Channel MOSFET ElecSuper IRF1404PBF ES with Low Gate Charge and 100 Percent UIS Tested Reliability
Key Attributes
Model Number:
IRF1404PBF(ES)
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
140A
RDS(on):
2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
480pF
Output Capacitance(Coss):
2.8nF
Pd - Power Dissipation:
83W
Input Capacitance(Ciss):
3.83nF
Gate Charge(Qg):
66nC@10V
Mfr. Part #:
IRF1404PBF(ES)
Package:
TO-220
Product Description
Product Overview
The IRF1404PBF(ES) is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced shielded gate trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This device is a standard, Pb-free product.
Product Attributes
- Brand: ElecSuper
- Origin: Not specified
- Material: Halogen free
- Color: Not specified
- Certifications: UL 94V-0
- Special Features: 100% UIS TESTED, Avalanche Rated
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 40 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25°C | 140 | A | ||
| Maximum Power Dissipation | PD | 83 | W | |||
| Pulsed Drain Current | IDM | 560 | A | |||
| Single Pulse Avalanche Energy | EAS | Starting TJ=25°C, VDD=32V, VG=10V, RG=25Ω, L=0.5mH | 200 | mJ | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Single Operation | ||||||
| Junction-to-Case Thermal Resistance | RθJC | 1.5 | °C/W | |||
| Electrical Characteristics | ||||||
| OFF CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 40 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=40V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 2.5 | V | |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=20A | 2.0 | 2.3 | mΩ | |
| VGS=4.5V, ID=20A | 3.0 | 3.8 | mΩ | |||
| CHARGES, CAPACITANCES AND GATE RESISTANCE | ||||||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | 3830 | pF | ||
| Output Capacitance | COSS | 2800 | pF | |||
| Reverse Transfer Capacitance | CRSS | 480 | pF | |||
| Total Gate Charge | QG(TOT) | VGS=10V, VDD=32V, ID=10A | 66 | nC | ||
| Gate-to-Source Charge | QGS | 13.6 | nC | |||
| Gate-to-Drain Charge | QGD | 12.6 | nC | |||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | td(ON) | VGS=10V, VDD=20V, ID=20A, RG=0.5Ω | 890 | ns | ||
| Rise Time | tr | 21 | ns | |||
| Turn-Off Delay Time | td(OFF) | 72 | ns | |||
| Fall Time | tf | 34 | ns | |||
| BODY DIODE CHARACTERISTICS | ||||||
| Forward Voltage | VSD | VGS=0V, IS=20A | 1.5 | V | ||
2504101957_ElecSuper-IRF1404PBF-ES_C42412305.pdf
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